Nonvolatile semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsByeong-Hoon Lee, Seung-Keun Lee
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Abstract
A sector structure of a flash memory device minimizes a layout area in a chip without deteriorating a high-speed operation. The sector structure of the flash memory device includes a plurality of sectors, each sector including memory cell transistors in a cell array block sharing a common bulk region with transistors in a column decoder block.
Claims20
A nonvolatile semiconductor memory device comprising:
- a plurality of sectors;
- each sector comprising memory cell transistors arranged in a cell array block and decoder transistors in a column decoder block;
- wherein the transistors in the cell array block and column decoder block in each sector share a common bulk region;
- and
- wherein said semiconductor memory device is configured to electrically erase all the memory cell transistors in a sector together.
A sector structure of a nonvolatile semiconductor memory, said sector structure comprising:
- a plurality of memory cell transistors arranged in a cell array block;
- and
- a plurality of decoder transistors arranged in a column decoder block, wherein said memory cell transistors and decoder transistors are arranged on a common bulk region.
A nonvolatile semiconductor memory device, comprising:
- a cell array block comprising a plurality of memory cell transistors having gates and drains, each gate being connected to a corresponding word line out of a plurality of word lines, each drain being connected to a corresponding bit line out of a plurality of bit lines;
- a source line driver commonly connected to sources of each memory cell transistor in the cell array block to apply a source voltage;
- a plurality of sectors, each sector comprising transistors of a column decoder connected between a plurality of bit lines and common data lines to select one bit line out of the plurality of bit lines;
- and
- a common bulk region arranged in each sector, wherein the memory cell transistors and the column decoder transistors of each sector share the common bulk region;
- and
- a bulk driver provided in each of the sectors, each said bulk driver configured to commonly apply a bulk voltage to the common bulk region of that sector.
A nonvolatile semiconductor memory device comprising:
- a plurality of sector units, each sector unit comprising a common bulk region, and wherein each sector unit is configured to be electrically erasable in response to an erase signal;
- and
- a plurality of memory cell transistors and transistors of a column decoder arranged in the common bulk region of each sector unit and configured to commonly receive a bulk voltage.
A method of forming a bulk region of a nonvolatile semiconductor device, said method comprising:
- forming a bulk region for memory cell transistors provided in a cell array block of the nonvolatile semiconductor memory device;
- and
- forming a bulk region for decoder transistors of a column decoder in the bulk region for the memory cell transistors of the cell array block.
Dependencies are inferred from the claim text.