Active matrix substrate for liquid crystal display and its fabrication
AssigneeNEC Corporation
InventorsAkitoshi Maeda, Hiroaki Tanaka, Shigeru Kimura, Satoshi Kimura
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Abstract
An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said Al—Nd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.
Claims45
An active matrix substrate, comprising:
- a substrate;
- a matrix array of thin film transistors (TFTs) disposed within a display area on said substrate;
- a double-layered film including an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal, said double-layered film forming first interconnection lines for connection to said TFTs;
- and
- a triple-layered film including an under-layer of said high melting point metal, a middle-layer of said Al—Nd alloy and an over-layer of said high melting point metal, said triple-layered film forming second interconnection lines for connection to said TFTs.
A method of fabricating a active matrix substrate including a substrate, a matrix array of thin film transistors (TFTs) disposed within a display area on the substrate, scanning lines for connection to the TFTs, and signal lines for connection to the TFTs, said method comprising:
- forming a double-layered film including an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal;
- and
- removing portions of said double-layered film to form the scanning lines.
A method of fabricating a active matrix substrate including a substrate, a matrix array of thin film transistors (TFTs) disposed within a display area on the substrate, scanning lines for connection to the TFTs, and signal lines for connection to the TFTs, said method comprising:
- forming a triple-layered film including an under-layer of high melting point metal, a middle-layer of Al—Nd alloy and an over-layer of said high melting point metal;
- and
- removing portions of said triple-layered film to form the signal lines.
Dependencies are inferred from the claim text.