Silicon-containing polymer and bilayer resist composition based thereon

Abstract

Polymeric compounds for use in a chemically amplified resist are represented by the following chemical formulas 1 and 2: 1 wherein R1 and R2, which may be identical or different, are each selected from the group consisting of —H and —CH3; R3 and R4, which may be identical or different, are each selected from the group consisting of —H, —CH3 and —CH2CH3; and 0.1≦m≦0.9 and 0.1≦n≦0.9, with the equation of m+n=1. 2 wherein R3, R4, and R5, which may be identical or different, are each selected from the group consisting of —H and —CH3; R6 and R7, which may be identical or different, are each selected from the group consisting of —H, —CH3 and —CH2CH3; R8 is —CH3 or —CH2CH2OH; and 0.1≦p≦0.9, 0.05≦q≦0.8, and 0.05≦r≦0.5, with the equation of p+q+r=1. Also disclosed are resist compositions comprising the polymeric compounds and photoacid generators.

Dependencies are inferred from the claim text.