Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
AssigneeDow Corning Corporation
InventorsMark Jon Loboda, Byung Keun Hwang
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Abstract
A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
Claims23
A chemical vapor deposition method for producing fluorinated hydrogenated silicon carbide films comprising
- introducing a reactive gas mixture comprising a silicon containing compound and a fluorocarbon compound into a deposition chamber containing a substrate
- inducing a reaction between the silicon containing compoud and fluorocarbon compound at a temperature of 25° C. to 500° C. to provide a film comprising hydrogen, silicon, carbon and fluorine.
A chemical vapor deposition method for producing fluorinated hydrogenated silicon oxycarbide films comprising
- introducing a reactive gas mixture comprising a silicon containing compound, a fluorocarbon compound and an oxygen providing gas into a deposition chamber containing a substrate
- inducing a reaction between the silicon containing compoud and fluorocarbon compound at a temperature of 25° C. to 500° C.
- wherein there is a controlled amount of oxygen present during the reaction to provide film comprising hydrogen, silicon, carbon, oxygen and fluorine.
Dependencies are inferred from the claim text.