Two-step flourinated-borophosophosilicate glass deposition process
AssigneeApplied Materials, Inc.
InventorsFrancimar Campana, Li-Qun Xia, Ellie Yieh
Life of this patent
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Abstract
A method for depositing a layer over a substrate includes depositing a first halogen-doped borophosphosilicate glass (BPSG) layer over said substrate at a first pressure level. A second halogen-doped BPSG layer is deposited over said first layer at a second pressure level, wherein said first pressure level is higher than said second pressure level.
Claims24
A method for depositing a layer over a substrate, said method comprising:
- depositing a first halogen-doped borophosphosilicate glass (BPSG) layer over said substrate at a first pressure level;
- and
- depositing a second halogen-doped BPSG layer over said first layer at a second pressure level, wherein said first pressure level is higher than said second pressure level.
A method for depositing a layer over a substrate, said method comprising:
- depositing a first fluorine-doped borophosphosilicate glass (FBPSG) layer over said substrate at a first pressure level;
- depositing a second FBPSG layer over said first layer at a second pressure level, wherein said first pressure level is higher than said second pressure level;
- and
- reflowing said at least said second layer using a rapid thermal pulse furnace.
A method for depositing a layer over a substrate, said method comprising:
- depositing a first halogen-doped borophosphosilicate glass (BPSG) layer over said substrate at a pressure between about 300 Torr and about 400 Torr using a process gas including about 17 wt. % O3 at about 5000 sccm;
- and
- depositing a second halogen-doped BPSG layer over said first layer at a pressure between about 150 Torr and about 200 Torr using a process gas including about 17 wt. % O3 at about 5000 sccm.
A method for depositing a layer over a substrate, said method comprising:
- depositing a first halogen-doped borophosphosilicate glass (BPSG) layer over said substrate at a first pressure level which is selected to provide said first layer with good film conformity;
- and
- depositing a second halogen-doped BPSG layer over said first layer at a second pressure level which is selected to provide a relatively high deposition rate, wherein said first pressure level is higher than said second pressure level.
A method for depositing a premetal dielectric layer over a substrate, comprising:
- depositing a first fluorinated-borophosphosilicate glass (FBPSG) layer over said substrate at a pressure of about 300 to 400 Torr using a process gas including tetraethoxysilane (TEOS), triethylborate (TEB), triethylfluorosilane (TEFS), triethylphosphate (TEPO), and about 17 wt. % O3 at a deposition rate of about 1000 to 2000 Å/min, to form said first layer having 0.5 to 3 wt. % fluorine and good conformity;
- and
- depositing a second FBPSG layer over said first layer at a pressure of about 150 to 200 Torr using a process gas including tetraethoxysilane (TEOS), triethylborate (TEB), triethylfluorosilane (TEFS), triethylphosphate (TEPO), and about 17 wt. % O3 at a deposition rate of about 4000 to 5000 Å/min, to form said second FBPSG layer having 0.5 to 3 wt. % fluorine.
A method for depositing a premetal dielectric layer over a substrate, comprising:
- depositing a first fluorinated-borophosphosilicate glass (FBPSG) layer over said substrate at a pressure of about 300 Torr using a process gas including tetraethoxysilane (TEOS), triethylborate (TEB), triethylfluorosilane (TEFS), triethylphosphate (TEPO), and about 17 wt. % O3 at about 5000 sccm, for about 20 to 30 seconds at a deposition rate of about 1000 to 2000 Å/min, to form said first layer having 0.5 to 3 wt. % fluorine and good conformity;
- depositing a second FBPSG layer over said first layer at a pressure of about 150 to 200 Torr using a process gas including tetraethoxysilane (TEOS), triethylborate (TEB), triethylfluorosilane (TEFS), triethylphosphate (TEPO), and about 17 wt. % O3 at about 5000 sccm, for about 110-150 seconds at a deposition rate of about 4000 to 5000 Å/min, to form said second FBPSG layer having 0.5 to 3 wt. % fluorine;
- and
- reflowing said first and second layers in a rapid thermal pulse furnace for 20 to 90 seconds at a temperature greater than 900° C. to minimize diffusion of fluorine atoms from said first and second layers.
Dependencies are inferred from the claim text.