Process for producing dielectric thin films
AssigneeAlliedSignal Inc.
InventorsTeresa Ramos, Douglas M. Smith, James Drage, Rick Roberts
Life of this patent
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Abstract
A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.
Claims22
A process for producing a cured dielectric film on a substrate which comprises depositing a nanoporous silica dielectric precursor onto a substrate which precursor comprises at least one hydrolysed and condensed alkoxysilane composition, and then heating the substrate in a substantially oxygen free environment at a temperature of about 350° C. or greater, for a time period of at least about 5 seconds.
A process for curing a dielectric film on a substrate which comprises the step of:
- treating a suitable substrate comprising a dielectric film, in a substantially oxygen free environment by heating the substrate to a temperature of about 350° C. or greater, for a time period of at least about 5 seconds.
A process for curing a nanoporous silica dielectric film on a substrate which comprises the step of:
- treating a suitable substrate comprising a dried nanoporous silica film, in a substantially oxygen free environment by heating the substrate to a temperature of about 350° C. or greater, for a time period of at least about 5 seconds.
A process for curing a nanoporous silica dielectric film on a substrate which comprises the steps of:
- (a) suspending a suitable substrate within a heating element, in a substantially oxygen free environment, wherein the substrate remains free of contact with the heating element, the substrate comprising a dried nanoporous silica film;
- (b) curing the dried nanoporous silica film sufficiently to remove outgassing remnants from the dried nanoporous silica film;
- then,
- (c) removing the cured, dried suitable substrate from the heating element.
A process for curing a nanoporous silica dielectric film on a substrate which comprises the steps of:
- (a) suspending a suitable substrate within a sealable hotplate, wherein the substrate remains free of contact with the hotplate, wherein the substrate comprises a dried nanoporous silica film;
- (b) sealing the hotplate, wherein the suspended substrate is contained therein;
- (c) passing an amount of inert gas across the substrate effective to displace non-inert gases adjacent to the substrate;
- (d) heating the hotplate to a temperature of from about 350° C. to about 600° C.;
- (e) contacting the substrate with the heated hotplate;
- and, removing the substrate from the hotplate.
A process for curing a nanoporous silica dielectric film on a substrate which comprises the steps of:
- (a) suspending a suitable substrate within a sealable hotplate, wherein the substrate remains free of contact with the hotplate, wherein the substrate comprises a dried nanoporous silica film;
- (b) sealing the hotplate, wherein the suspended substrate is contained therein;
- (c) drawing a vacuum within the hotplate effective to create a substantially oxygen free environment adjacent to the substrate;
- (d) heating the hotplate to a temperature of from about 350° C. to about 600° C.;
- (e) contacting the substrate with the heated hotplate;
- and,
- (f) removing the substrate from the hotplate.
Dependencies are inferred from the claim text.