US 2002/0173164 A1 · Multideposition SACVD reactor

Abstract

There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si3N4, SiO2, and SiON and non-dielectric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.

Claims16

Dependent claims

A multideposition sub-atmospheric chemical vapor deposition (SACVD) reactor comprising:

a substrate processing chamber;
a carbon susceptor adapted to hold a substrate in said substrate processing chamber during a SACVD operation, wherein said carbon susceptor consists is coated by a polysilicon film to protect it against said cleaning gases;
a gas distribution system adapted to introduce gases into said substrate processing chamber and including appropriate valves, gas supply lines and other equipment necessary to flow gases into said substrate processing chamber, wherein said gases include dielectric/non-dielectric forming gases and in-situ cleaning gases that are aggressive to carbon;
a heating system to heat said susceptor to an adequate deposition temperature;
a pressurization system adapted to set a pressure level within said substrate processing chamber;
and
a controller coupled to said gas distribution system and pressurization system for directing operation of said SACVD reactor.

4 more elements

Dependencies are inferred from the claim text.

Multideposition SACVD reactor

Life of this patent

Multideposition SACVD reactor

Life of this patent

Abstract

Claims16