Thin-film-transistor-array substrate, thin-film-transistor-array fabrication method, and display device
AssigneeInternational Business Machines Corporation
InventorsYasunobu Hiromasu, Teruhiro Nakasogi
Life of this patent
Estimating the term…
Abstract
A TFT array substrate 10 of the present invention includes an insulating substrate 12, thin-film transistors formed on the insulating substrate 12 in a matrix, and wirings 46 electrically connected to the thin-film-transistors. A gate-insulating film 32 is formed on the wiring 46, a passivation film 38 is formed on the gate-insulating film 32, and moreover an interlayer insulating film 42 containing an organic polymer with an edge formed thereon is formed on the gate-insulating film 32. An etching stopper 50 is formed on at least either of the gate-insulating film 32 exposed from the edge 48 of the interlayer insulating film 42 or the passivation film 38.
Claims15
A thin-film-transistor array substrate, comprising:
- an insulating substrate;
- a thin-film-transistor formed on said insulating substrate in a matrix;
- a conductive wiring formed on said insulating substrate and electrically connected to said thin-film-transistor;
- an insulating film formed adjacently to said conductive wiring;
- a polymer insulating film formed on said insulating film and having an edge;
- and
- an etching stopper formed on said insulating film so as to protrude from the edge of said polymer-insulating film.
A thin-film-transistor-array substrate fabrication method, comprising the steps of:
- providing an insulating substrate,
- depositing a conductive material on said insulating substrate and patterning said conductive material to form a conductive wiring including a wiring pattern;
- forming a thin-film-transistor structure including a first insulating film;
- forming a second insulating film for covering at least said thin-film-transistor structure;
- forming an etching stopper on said first or second insulating films;
- forming a polymer insulating film containing an organic polymer on said second insulating film and patterning said polymer insulating film to form an edge on said organic polymer insulating film;
- and
- etching said first and second insulating films and stopping on said etching stopper to form an insulating structure comprising at least said first insulating film for covering said conductive wiring protruding from said edge to the outside of said polymer insulating film.
Dependencies are inferred from the claim text.