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US 2002/0173149 A1Published application
Local dry etching method
AssigneeSpeedfam Corporation
InventorsMichihiko Yanagisawa, Tadayoshi Okuya
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Abstract
In a local dry etching method of the invention, a surface of a representative wafer sampled from a lot is test etched, each wafer of which is sliced from the same ingot, and initial data of recesses and projections of which is previously known, recesses and projections of the representative wafer is measured after test etched, an etching profile is derived from the initial data and measured data and then respective wafer surfaces of the lot are etched in condition calculated by using at least the derived etching profile.
Claims8
A local dry etching method comprising the steps of:
- test etching a surface of a representative wafer sampled from a lot, wherein each wafer of said lot being sliced from the same ingot and initial data of recesses and projections of said representative wafer being known;
- measuring recesses and projections of said representative wafer after said test etching is executed;
- deriving an etching profile from said initial data and measured data in said measuring step;
- and
- etching respective wafer surfaces of said lot in condition calculated by using at least said etching profile.
2 more elements
Dependencies are inferred from the claim text.