Thin film semiconductor device and method for producing the same

In a fabrication process for a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device characterized by the inclusion of a process in which said semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using a chemical specie containing constitutive elements of said semiconductor film as the source gas with said source gas concentration of approximately 6.25% or less, and, moreover, using argon (Ar) as an additional gas.

In a fabrication process for a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device characterized by the inclusion of a process in which said semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using a chemical specie containing constitutive elements of said semiconductor film as the source gas with a pressure in the reaction chamber during semiconductor film deposition of approximately 1.0 Torr or higher, and, moreover, using argon (Ar) as an additional gas.

In a fabrication process for a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device characterized by the inclusion of a process in which said semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using a chemical specie containing constitutive elements of said semiconductor film as the source gas with an electrode separation in the reaction chamber during semiconductor film growth of approximately 17.8 mm or greater, and, moreover, using argon (Ar) as an additional gas.

In the fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on an insulating material on the substrate, at least a part of which is an insulating material;

• a fabrication process of a thin film semiconductor device which is characterized by a first step in which a semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using a chemical specie containing constitutive elements of said semiconductor film as the source gas and further, using argon (Ar) as an additional gas;
• and
• a second step in which the crystallinity of said semiconductor film is improved.

In a fabrication process for a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using a chemical specie containing constitutive elements of said semiconductor film as the source gas and, further, using argon (Ar) as an additional gas;
• and
• a second step in which said semiconductor film is exposed to optical energy or electromagnetic wave energy irradiation.

In a fabrication process for a thin film semiconductor device having a silicon film as the active layer of a transistor, said silicon film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a thin film semiconductor device characterized by the fact that when said silicon film is measured by infrared absorption spectroscopy, there are at least two absorption peaks, one near 2102 cm−1 (between 2098 cm−1 and 2106 cm−1) and the other near 2084 cm−1 (between 2080 cm−1, and 2088 cm−1) and that the intensity of said absorption peak near 2102 cm−1, is stronger than the intensity of an absorption peak near 2000 cm−1 (between 2080 cm−1 and 2020 cm−1).

In a fabrication process for a thin film semiconductor device having a silicon film as the active layer of a transistor, said silicon film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by the inclusion of a process in which a silicon film is deposited by plasma-enhanced chemical vapor deposition (PECVD), said silicon film having at least two absorption peaks, one near 2102 cm−1(between 2098 cm−1 and 2106 cm−1) and the other near 2084 cm−1 (between 2080 cm−1 and 2088 cm−1) and that the intensity of said absorption peak near 2102 cm−1 is stronger than the intensity of an absorption peak near 2000 cm−1 (between 1980 cm−1 and 2020 cm−1) when measured by infrared absorption spectroscopy.

In a fabrication process of a thin film semiconductor device having a silicon film as the active layer of a transistor, said silicon film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a silicon film is formed, said silicon film having at least two absorption peaks, one near 2102 cm−1 (between 2098 cm−1 and 2106 cm−1) and the other near 2084 cm−1 (between 2080 cm−1 and 2088 cm−1) and that the intensity of said absorption peak near 2102 cm−1 is stronger than the intensity of an absorption peak near 2000 cm−1 (between 1980 cm−1 and 2020 cm−1) when measured by infrared absorption spectroscopy;
• and a second step in which the crystallinity of said silicon film is improved.

In a fabrication process of a thin film semiconductor device having a silicon film as the active layer of a transistor, said silicon film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a silicon film is formed, said silicon film having at least two absorption peaks, one near 2102 cm−1 (between 2098 cm−1 and 2106 cm−1) and the other near 2084 cm−1 (between 2080 cm−1 and 2088 cm−1) and that the intensity of said absorption peak near 2102 cm−1 is stronger than the intensity of an absorption peak near 2000 cm−1 (between 1980 cm−1 and 2020 cm−1) when measured by infrared absorption spectroscopy;
• and a second step in which said silicon film is exposed to optical energy or electromagnetic wave energy irradiation.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a thin film semiconductor device characterized by the fact that said semiconductor film has both amorphous and crystalline components and said amorphous component has a columnar structure.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a semiconductor film having both amorphous and crystalline components, said amorphous component having a columnar structure, is deposited;
• and
• a second step in which the crystallinity of said columnar structure semiconductor film is improved.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a semiconductor film having both amorphous and crystalline components, said amorphous component having a columnar structure, is deposited;
• and
• a second step in which said columnar structure semiconductor film is exposed to optical energy or electromagnetic wave energy irradiation.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a semiconductor film having both amorphous and crystalline components, said amorphous component having a columnar structure, is deposited by means of plasma-enhanced chemical vapor deposition (PECVD);
• and
• a second step in which the crystallinity of said columnar structure semiconductor film is improved.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a semiconductor film having both amorphous and crystalline components, said amorphous component having a columnar structure, is deposited by means of plasma-enhanced chemical vapor deposition (PECVD);
• and
• a second step in which said columnar structure semiconductor film is exposed to optical energy or electromagnetic wave energy.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film having mixed crystallinity and being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by the presence of argon (Ar) in the reaction chamber during the growth of said semiconductor film.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by the inclusion of a process step in which a mixed-crystallinity semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using argon (Ar) as a dilution gas.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a mixed-crystallinity semiconductor film is deposited in an argon (Ar)-containing atmosphere;
• and
• a second step in which said mixed-crystallinity semiconductor film is crystallized.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a semiconductor film in a mixed-crystallinity state is deposited under an argon-containing atmosphere;
• and
• a second step in which the said semiconductor film in a mixed-crystallinity state is exposed to optical energy or electromagnetic wave energy irradiation.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a mixed-crystallinity semiconductor film is deposited by means of plasma-enhanced chemical vapor deposition (PECVD) using argon (Ar) as a dilution gas;
• and
• a second step in which said mixed-crystallinity semiconductor film is crystallized.

In a fabrication process of a thin film semiconductor device having as the active layer of a transistor a semiconductor film, said semiconductor film being formed on top of an insulating material on the substrate, at least a portion of which is an insulating material;

• a fabrication process of a thin film semiconductor device, said fabrication process being characterized by a first step in which a mixed-crystallinity semiconductor film is deposited means of plasma-enhanced chemical vapor deposition (PECVD) using argon (Ar) as a dilution gas;
• and
• a second step in which the said semiconductor film in a mixed-crystallinity state is exposed to optical energy or electromagnetic wave energy irradiation.