Method of fabricating a semiconductor device
AssigneeInteruniversitair Microelektronica Centrum (IMEC)
InventorsSerge Vanhaelemeersch, Karen Maex
Life of this patent
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Abstract
This invention relates to Integrated Circuit (IC) processing and fabrication. A device and a method are provided for etching an opening in an insulating layer while depositing a barrier layer on the side walls of the opening without essentially depositing a barrier layer on the bottom of the opening.
Claims36
A method for forming at least one opening in an insulating layer on a substrate while depositing a barrier layer on side walls of the opening without essentially depositing the barrier layer on a bottom of the opening, the method comprising the steps of:
- subjecting the substrate to a plasma, the plasma being generated in a gaseous mixture comprising at least three components, the components comprising a first component for depositing the metal barrier layer on at least the side walls of the opening, a second component for forming an opening in the insulating layer, and a third component for removing the barrier layer being formed on the bottom of the opening;
- etching the insulating layer with the plasma;
- and
- depositing the barrier layer on the side walls of the opening with the plasma.
A device comprising an insulating layer on a substrate, the insulating layer having an opening, wherein side walls of the opening are covered with a barrier layer and a bottom of the opening is essentially not covered with the barrier layer, characterized in that the device is produced by a method comprising the steps of:
- subjecting the substrate to a plasma, wherein the plasma is generated in a gaseous mixture comprising at least three components, the components comprising:
- a first component for depositing the metal barrier layer on at least the side walls of the opening, a second component for forming an opening in the insulating layer, and a third component for removing the barrier layer formed on the bottom of the opening;
- etching the insulating layer with the plasma;
- and
- depositing the barrier layer on the side walls of the opening with the plasma.
A gaseous mixture for use in a method for forming at least one opening in an insulating layer on a substrate while depositing a barrier layer on side walls of the opening without essentially depositing the barrier layer on a bottom of the opening, wherein a plasma is generated from the gaseous mixture, and wherein the gaseous mixture comprises a first component, a second component, and a third component, wherein the first component deposits a barrier layer on the side wall of the opening, wherein the second component forms the opening in the insulating layer, and wherein the third component removes the barrier layer formed on the bottom of the opening.
A mixture as recited in 31, wherein the gaseous mixture further comprises an inert gas.
Dependencies are inferred from the claim text.