Bump transfer plate, manufacturing method thereof, semiconductor device, and manufacturing method thereof
AssigneeNEC Corporation
InventorsHiroyuki Tsukui, Chikara Yamashita, Tetsuya Tao
Life of this patent
Estimating the term…
Abstract
A bump formation plate is provided with a base and solder bumps formed on the base. The top portion of the solder bump inclines from the center thereof to the periphery thereof. A contact surface of the solder bump with the base may be flat. The base is made of, for example, aluminum or stainless steel.
Claims18
A bump transfer plate comprising:
- a base;
- and
- a solder bump formed on said base, a top portion of said solder bump inclining from a central part thereof to a peripheral part thereof.
A method of manufacturing a bump transfer plate, comprising the steps of:
- forming a photo resist layer on a base, said photo resist layer having a hole at a region where a solder bump is intended to be formed;
- stacking a bump formation material into said hole and on said photo resist layer;
- and
- removing said photo resist layer to form a solder bump.
A method of manufacturing a bump transfer plate, comprising the steps of:
- forming a photo resist layer on a base, said photo resist layer having a hole at a region where a solder bump is intended to be formed;
- stacking a bump formation material into said hole and on said photo-resist layer;
- applying flux onto a surface of said bump formation material;
- heating said bump formation material and said flux;
- and
- removing said flux to form a solder bump.
A method of manufacturing a bump transfer plate, comprising the steps of:
- burying a solder paste in a hollow formed in a bump formation substrate, the deepest part of said hollow being rounded;
- overlapping a base on a surface of said bump formation substrate where said hollow is formed;
- and
- heating said solder paste and said base to form a solder bump.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a photo resist layer on a base, said photo resist layer having a hole at a region where a solder bump is intended to be formed;
- stacking a bump formation material into said hole and on said photo resist layer;
- removing said photo resist layer to form a solder bump;
- and
- bonding an electrode provided to a semiconductor element and said solder bump together.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a photo resist layer on a base, said photo resist layer having a hole at a region where a solder bump is intended to be formed;
- stacking a bump formation material into said hole and on said photo resist layer;
- applying flux onto a surface of said bump formation material;
- heating said bump formation material and said flux;
- removing said flux to form a solder bump;
- and
- bonding an electrode provided to a semiconductor element and said solder bump together.
A method of manufacturing a semiconductor device, comprising the steps of:
- burying a solder paste in a hollow formed in a bump formation substrate, the deepest part of said hollow being rounded;
- overlapping a base on a surface of said bump formation substrate where said hollow is formed;
- heating said solder paste and said base to form a solder bump;
- and
- bonding an electrode provided to a semiconductor element and said solder bump together.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a photo resist layer on a base, said photo resist layer having a hole at a region where a solder bump is intended to be formed;
- stacking a bump formation material into said hole and on said photo resist layer;
- removing said photo resist layer to form a solder bump;
- and
- bonding an electrode provided to a package substrate and said solder bump together.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a photo resist layer on a base, said photo resist layer having a hole at a region where a solder bump is intended to be formed;
- stacking a bump formation material into said hole and on said photo resist layer;
- applying flux onto a surface of said bump formation material;
- heating said bump formation material and said flux;
- removing said flux to form a solder bump;
- and
- bonding an electrode provided to a package substrate and said solder bump together.
A method of manufacturing a semiconductor device, comprising the steps of:
- burying a solder paste in a hollow formed in a bump formation substrate, the deepest part of said hollow being rounded;
- overlapping a base on a surface of said bump formation substrate where said hollow is formed;
- heating said solder paste and said base to form a solder bump;
- and
- bonding an electrode provided to a package substrate and said solder bump together.
Dependencies are inferred from the claim text.