Doped silicon deposition process in resistively heated single wafer chamber

A method of forming a doped polycrystalline silicon film comprising:

• placing a substrate onto a susceptor, the susceptor comprising a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater, the susceptor being located in a process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor;
• heating the susceptor to a temperature between 710-740° C.;
• maintaining a pressure between 100-350 Torr in the process chamber;
• providing a process gas mix into the process chamber through a shower head located above the susceptor, wherein the process gas mix comprises a silicon source gas, a dopant gas, and a carrier gas, the carrier gas comprising nitrogen (N2) at a flow rate of about 9 slm in the top portion of the chamber;
• and
• forming said doped polycrystalline silicon film from the silicon source gas.

A method of forming a doped amorphous silicon film comprising:

• placing a substrate onto a susceptor, the susceptor comprising a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater, the susceptor being located in a process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor;
• heating the susceptor to a temperature between 580-620° C.;
• maintaining a pressure between 100-350 Torr in the process chamber;
• providing a process gas mix into the process chamber through a shower head located above the susceptor, wherein the process gas mix comprises a silicon source gas, a dopant gas, and a carrier gas, the carrier gas comprising nitrogen (N2) at a flow rate of about 9 slm in the top portion of the chamber;
• and
• forming said doped amorphous silicon film from the silicon source gas.

A substrate processing system comprising:

• a susceptor, located within a process chamber, that holds a substrate during substrate processing;
• a gas delivery system for introducing a process gas mix into the process chamber to deposit a layer over said substrate;
• a pump coupled to a gas outlet for controlling the chamber pressure;
• a controller for controlling said gas delivery system and said pump;
• and
• a memory coupled to said controller comprising a computer readable medium having a computer readable program embodied therein for directing operation of said processing system, said computer readable program comprising instructions for controlling said gas delivery system to introduce a process gas mix including a silicon source gas, a dopant gas, and a dilution gas mix wherein the dilution gas mix comprises nitrogen (N2).