CVD-SiC self-supporting membrane structure and method for manufacturing the same
AssigneeToshiba Ceramics Co., Ltd.
InventorsShuichi Takeda, Hiroaki Sato
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Abstract
The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=β(220)/β(111) of β(220) peak to β(111) peak intensities of the X-ray diffracted beams in a thickness direction being 0.1 or more, and a layer B having a peak intensity ratio r of 0.01 or less are laminated alternately and repeatedly, and the layer A is laid on either side in the thickness direction.
Claims5
A CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=β(220)/β(111) of β(220) to β(111) peak intensities of the X-ray diffracted beams in a thickness direction being 0.1 or more, and a layer B having a peak intensity ratio r of 0.01 or less are laminated alternately and repeatedly, and said layer A is laid on either side in said thickness direction.
A method for manufacturing a CVD-SiC self-supporting membrane structure, including:
- a first step of forming a CVD-SiC membrane on the surface of a carbon substrate, a tungsten substrate or a molybdenum substrate by heating in the atmosphere of a mixture gas containing at least dichlorosilane, ethylene, and hydrogen, in which the volume ratio of components is a:b=2.5:1 to 1.7:1 and b:c=1:10 to 1:18, supposing that the volume of dichlorosilane is a, the volume of ethylene is b and the volume of hydrogen is c;
- and
- a second step of forming a CVD-SiC membrane by heating in the atmosphere of said mixture gas, in which the volume ratio of three components is a:b=2.5:1 to 1.7:1 and b:c=1:22 to 1:28, wherein
- said method including forming a CVD-SiC laminate membrane by repeating said first step and said second step for a plurality of times, forming a CVD-SiC membrane by said first step on the top layer, and then removing said substrate.
Dependencies are inferred from the claim text.