Method for manufacturing buried areas

Abstract

In the previously known methods, the buried layers, such as suicide for example, are produced on SOI wafers by thinning the wafer bonded onto the SOI wafer to the desired thickness, and then isolating the layers grown on the SOI wafer by means of a trench process. According to the new method, areas with modified layer parameters, which are buried by bonding with another wafer, are created on the surface of the first wafer, which has an insulating layer. An insulating layer is then applied, and the surface of the first wafer is bonded to the surface of another wafer. The substrate layer and the insulating intermediate layer of the first wafer are subsequently removed. This eliminates the thinning of the second wafer. In addition, areas with vertical gradients can be created in the layer parameters without processing the second wafer.

Dependencies are inferred from the claim text.