Semiconductor device and process of fabricating the same

A process of fabricating a semiconductor device, comprising the steps of:

• forming a semiconductor element in a semiconductor substrate;
• forming an interlayer insulating film on said semiconductor substrate;
• denaturing a surface of the interlayer insulating film by plasma-nitriding the interlayer insulating film, thereby forming an insulating barrier layer for preventing diffusion of a metal contained in a wiring layer;
• and
• forming a wiring layer containing said metal on said conductive barrier layer.

A semiconductor device comprising:

• an insulating film formed on a semiconductor substrate and having a wiring groove;
• a denatured layer formed by plasma nitriding treatment on an inner surface of said wiring groove;
• and
• a wiring layer formed in said wiring groove on inner surface of which said denatured layer is formed.

A process of fabricating a semiconductor device, comprising the steps of:

• forming an insulating film on a semiconductor substrate;
• forming a wiring groove in said insulating film;
• forming a denatured layer on an inner surface of said wiring groove by plasma-nitriding a surface of said insulating film;
• and
• forming a wiring layer in said wiring groove on inner surface of which said denatured layer is formed.

A semiconductor device comprising:

• an insulating film formed on a semiconductor substrate;
• a denatured layer formed by plasma nitriding treatment on said insulating film;
• and
• a wiring layer formed on said denatured layer.