Method of forming a capacitor
AssigneeMicron Technology, Inc.
InventorsF. Daniel Gealy, Thomas M. Graettinger
Life of this patent
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Abstract
A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention may be used to form devices, such as memory devices and processors. The present invention also includes a method of making a capacitor. The method includes forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, and alloys thereof. The method also includes forming a second electrode and forming a dielectric between the first and second electrodes.
Claims80
A capacitor, comprising:
- a first electrode selected from a group consisting of transition metals, conductive metaloxides, alloys thereof, and combinations thereof;
- a second electrode;
- and
- a dielectric between said first and second electrodes.
A capacitor, comprising:
- a first electrode having a non-smooth surface and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode;
- and
- a dielectric between said first and second electrodes.
A capacitor, comprising:
- a substrate assembly;
- a first electrode on said substrate assembly and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode;
- and
- a dielectric between said first and second electrodes.
A capacitor, comprising:
- a first substrate layer;
- a first electrode on said first substrate layer and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode including a strap;
- a second substrate layer on said second electrode;
- and
- a dielectric between said first and second electrodes.
A device, comprising a capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode;
- and a dielectric between said first and second electrodes.
A system, comprising:
- a first device including a capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode;
- and a dielectric between said first and second electrodes;
- a second device;
- and
- a bus connected to both said first device and said second device.
A capacitor, comprising:
- a substrate assembly;
- an interconnect recessed in said substrate assembly;
- a first electrode formed on said interconnect and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode;
- and
- a dielectric between said first and second electrodes.
A capacitor, comprising:
- a first substrate layer;
- an interconnect recessed in said first substrate layer;
- a first electrode on said interconnect and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- a second electrode;
- a second substrate layer on said second electrode;
- and
- a dielectric between said first and second electrodes.
A method of forming a capacitor including:
- forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- and
- forming a dielectric between said first and second electrodes.
A method of forming a capacitor, comprising:
- forming a layer of hemispherical grain polysilicon;
- forming the first electrode on the hemispherical grain polysilicon selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- and
- forming a dielectric between said first and second electrodes.
A method, comprising:
- forming a substrate assembly;
- forming a layer of hemispherical grain polysilicon on the substrate assembly;
- forming the first electrode on the hemispherical grain polysilicon selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- forming a dielectric between said first and second electrodes;
- removing a portion of the substrate assembly;
- and
- removing the hemispherical grain polysilicon.
A method, comprising:
- forming a substrate assembly;
- forming an interconnect recessed in the substrate assembly;
- forming the first electrode on the interconnect and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- forming a dielectric between said first and second electrodes;
A method, comprising:
- forming a first electrode having a non-smooth surface and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- and
- forming a dielectric between the first and second electrodes.
A method, comprising:
- forming a substrate assembly;
- forming a first electrode on the substrate assembly and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- and
- forming a dielectric between said first and second electrodes.
A method, comprising:
- forming a first substrate layer;
- forming a first electrode on the first substrate layer and selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode including a strap;
- forming a second substrate layer on the second electrode;
- and
- forming a dielectric between said first and second electrodes.
A method of forming a device, comprising forming a capacitor including forming a first electrode selected from a group consisting of transition metals, conductive metaloxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- and forming a dielectric between the first and second electrodes.
A method of forming a system, comprising:
- providing a first device including forming a capacitor including forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof;
- forming a second electrode;
- and forming a dielectric between the first and second electrodes;
- providing a second device;
- and
- providing a bus connected to both the first device and the second device.
Dependencies are inferred from the claim text.