Embedded electrically programmable read only memory devices
OwnerJeng-Jye Shauinventor
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Abstract
The present invention teaches novel electrically programmable read only memory (EPROM) devices for embedded applications. EPROM devices of the present invention utilize existing circuit elements without complicating existing manufacture technologies. They can be manufactured by dynamic random access memory (DRAM) technologies, standard logic technologies, or any type of IC manufacture technologies. Unlike conventional EPROM devices, these novel devices do not require high voltage circuits to support their programming operation. EPROM devices of the present invention are ideal for embedded applications. Typical applications including the redundancy circuits for DRAM, the programmable firmware for logic products, and the security identification circuits for IC products.
Claims22
A method for manufacturing a plurality of electrically programmable read only memory (EPROM) cells and a plurality of dynamic random access memory (DRAM) on a single wafer comprising:
- forming a plurality of semiconductor transistors near a top surface of said single wafer;
- and
- simultaneously forming a coupling capacitor for each of said EPROM cells and a storage capacitor for each of said DRAM cells with said coupling capacitor and said storage capacitor having a substantially identical shape and structure disposed immediately above said semiconductor transistors.
A method for manufacturing a EPROM device comprises
- forming a plurality of active circuit elements;
- and
- forming a stress means to apply electrical stresses to change an active performance characteristic of said active circuit elements.
An EPROM device comprises
- a plurality of active circuit elements;
- and
- a stress means to apply electrical stresses to change an active performance characteristic of said active circuit elements.
A single semiconductor wafer supports a plurality of electrically programmable read only memory (EPROM) cells and a plurality of dynamic random access memory (DRAM) wherein:
- each of said EPROM cells includes a coupling capacitor and each of said DRAM cells includes a storage capacitor wherein said coupling capacitor and said storage capacitor having a substantially identical shape and structure disposed immediately above a plurality of semiconductor transistors disposed at a top surface of said wafer whereby said EPROM cell and said DRAM cells are simultaneously manufactured on said single semiconductor wafer.
Dependencies are inferred from the claim text.