Fabricating ferroelectric memory device

A method for fabricating a high density ferroelectric memory device, comprising:

• forming an insulating film on a semiconductor substrate;
• selectively etching the insulating film to form a contact hole so as to expose a part of the semiconductor substrate;
• forming a plug to bury it into the contact hole;
• forming a barrier film on the plug to completely fill the contact hole;
• sequentially forming a seed layer and a sacrificial layer on the insulating film including the barrier film;
• selectively etching the sacrificial layer to form a loop-shaped sacrificial layer pattern;
• simultaneously forming first and second electrodes on the seed layer thus exposed after formation of the sacrificial layer pattern;
• removing the sacrificial layer pattern;
• etching the seed layer thus exposed after removal of the sacrificial layer pattern;
• and
• forming a ferroelectric thin film by carrying out a spin-on process on an entire surface including the first and second electrodes.