Semiconductor integrated circuit and method of manufacturing same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTomonori Okudaira
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTomonori Okudaira
Estimating the term…
In a semiconductor integrated circuit having improvement in integration, it is an object of the present invention to provide a structure ensuring a contact area between a contact plug and a conductive layer formed thereon and connected thereto, to thereby realize reduction in contact resistance. A plurality of bit lines (8) are selectively formed in an interlayer insulating film (9). Each of the bit lines (8) is connected to a predetermined impurity diffusion layer (2) through a contact plug (7). The upper surface of a contact plug (10) as an end opposite to the lower surface thereof protrudes from the main surface of the interlayer insulating film (9). On the contact plug (10), a capacitor lower electrode (11) is formed to cover the protruding part of the contact plug (10) in such a manner that the center of the capacitor lower electrode (11) is located at a position deviated from the center of the contact plug (10).
A semiconductor integrated circuit, comprising:
A semiconductor integrated circuit, comprising:
A method of manufacturing a semiconductor integrated circuit, comprising the steps of:
Dependencies are inferred from the claim text.