Contact plug formation for devices with stacked capacitors

A method for fabricating a semiconductor device, comprising the steps of:

• providing parallel gate structures disposed on a substrate with spaces between the gate structures;
• blanket depositing polysilicon in the spaces and over the gate structures such that contact with the substrate is made by the polysilicon;
• patterning a contact mask such that stripes are formed over the spaces, which are over active areas;
• removing the polysilicon in accordance with the mask to provide contacts formed from the polysilicon having a height greater than a height of the gate structures in the spaces over the active areas;
• depositing a dielectric layer over the gate structures and over the contacts;
• forming holes down to the contacts;
• and
• connecting a conductive region to the contacts through the holes.

A method for fabricating a semiconductor device, comprising the steps of:

• providing parallel gate structures disposed on a substrate with spaces between the gate structures;
• depositing polysilicon in the spaces and over the gate structures such that contact with the substrate is made by the polysilicon;
• patterning a contact mask such that the contact mask covers a same layout area over the spaces and the gate structures as an active area formed in the substrate;
• removing the polysilicon in accordance with the mask to provide contacts in the spaces over the active areas, the contacts being formed from the polysilicon having about a same height as the gate structures;
• depositing a dielectric layer over the gate structures and over the contacts;
• forming holes down to the contacts;
• and
• connecting a conductive region to the contacts through the holes.