Disposable spacer and method of forming and using same

A method of forming a disposable spacer, the method comprising the steps of:

• providing a device structure;
• forming a layer of germanium-silicon alloy on the device structure;
• and
• etching the layer to form the disposable spacer.

A method for use in the fabrication of semiconductor devices, the method comprising:

• providing a device structure;
• forming a germanium-silicon layer on the device structure;
• and
• forming a disposable spacer aligned to a first portion of the device structure from the germanium-silicon layer to allow for materially altering a second portion of the device structure, the second portion of the device structure offset from the first portion of the device structure by the disposable spacer.

A method for use in fabricating semiconductor devices, the method comprising the steps of:

• providing a first region of material;
• forming a second region of material at a position relative to the first region of material, the second region of material having a surface in contact with and extending from the first region of material;
• forming a disposable spacer from a germanium-silicon alloy on a portion of the surface of the second region of material, the disposable spacer extending over a first portion of the first region of material;
• and
• implanting a second portion of the first region of material offset relative to the second region of material by the disposable spacer.

A method for use in fabricating semiconductor devices, the method comprising the steps of:

• providing a device structure;
• forming a disposable spacer comprising germanium;
• and
• removing the disposable spacer.

A method for use in fabricating semiconductor devices, the method comprising the steps of:

• providing a first region of material;
• forming a second region of material at a position relative to the first region of material;
• forming a disposable spacer of germanium-silicon alloy in contact with a portion of the second region of material;
• and
• etching the first region of material offset relative to the second region of material by the disposable spacer.

A method for use in the fabrication of MOS devices, the method comprising the steps of:

• providing a substrate having a gate structure formed thereon, the gate structure including at least one sidewall;
• forming a germanium-silicon layer over the gate structure and substrate;
• forming a disposable spacer from the germanium-silicon layer on the at least one sidewall;
• and
• implanting a portion of the substrate offset from the gate structure by the disposable spacer.

A method for use in the fabrication of semiconductor devices, the method comprising the steps of:

• providing a substrate having an oxidation mask thereon, the oxidation mask including at least one sidewall;
• forming oxide on the substrate;
• forming a germanium-silicon layer over the oxidation mask and substrate;
• forming a disposable spacer using the germanium-silicon layer on the at least one sidewall;
• and
• implanting a portion of the substrate offset from the oxidation mask by the disposable spacer.

A method of forming a disposable spacer, the method comprising:

• providing a device structure;
• forming a layer of germanium-silicon alloy on the device structure, wherein the layer of germanium-silicon alloy comprises a first portion (x) of germanium and a second portion (1−x) of silicon, wherein x is greater than about 0.7;
• and
• etching the layer to form the disposable spacer.

A method for use in the fabrication of semiconductor devices, the method comprising:

• providing a device structure;
• forming a germanium-silicon layer on the device structure, wherein the germanium-silicon layer comprises a first portion (x) of germanium and a second portion (1−x) of silicon, wherein x is greater than about 0.7;
• and
• forming a disposable spacer aligned to a first portion of the device structure from the germanium-silicon layer to allow for materially altering a second portion of the device structure, wherein the second portion of the device structure is offset from the first portion of the device structure by the disposable spacer.

A method for use in fabricating semiconductor devices, the method comprising:

• providing a first region of material;
• forming a second region of material at a position relative to the first region of material, wherein the second region of material comprises a surface in contact with and extending from the first region of material;
• forming a disposable spacer from a germanium-silicon alloy on a portion of the surface of the second region of material, wherein the disposable spacer extends over a first portion of the first region of material, wherein the disposable spacer comprises a first portion (x) of germanium and a second portion (1−x) of silicon, and further wherein x is greater than about 0.7;
• and
• implanting a second portion of the first region of material offset relative to the second region of material by the disposable spacer.

A method for use in the fabrication of MOS devices, the method comprising:

• providing a substrate comprising a gate structure formed thereon, the gate structure comprising at least one sidewall;
• forming a germanium-silicon layer over the gate structure and substrate;
• forming a disposable spacer from the germanium-silicon layer on the at least one sidewall, wherein the disposable spacer comprises a first portion (x) of germanium and a second portion (1−x) of silicon, wherein x is greater than about 0.2;
• and
• implanting a portion of the substrate offset from the gate structure by the disposable spacer.

A method for use in the fabrication of MOS devices, the method comprising:

• providing a substrate comprising PMOS and NMOS devices fabricated thereon, wherein each PMOS and NMOS device comprises a gate structure comprising at least one permanent spacer on at least one sidewall, wherein the width of the at least one permanent spacer is optimized for implant offset from a gate structure of an NMOS device;
• forming a germanium-silicon layer over the PMOS and NMOS devices and the substrate, wherein the germanium-silicon layer comprises a first portion (x) of germanium and a second portion (1−x) of silicon, wherein x is greater than about 0.2;
• etching the germanium-silicon layer to form a disposable spacer on the at least one permanent spacer on at least one sidewall of the PMOS device;
• implanting a portion of the substrate offset from the gate structure of each PMOS device by the disposable spacer;
• and
• removing the disposable spacer on the at least one permanent spacer on the at least one sidewall of the PMOS device.

A method for use in the fabrication of MOS devices, the method comprising:

• providing a substrate comprising PMOS and NMOS devices fabricated thereon, wherein each PMOS and NMOS device comprises a gate structure comprising at least one permanent spacer on at least one sidewall, wherein the width of the at least one permanent spacer is optimized for implant offset from a gate structure of an NMOS device;
• forming a disposable germanium-silicon spacer on at least one permanent spacer on at least one sidewall of at least one PMOS device, wherein the disposable germanium-silicon spacer comprises a first portion (x) of germanium and a second portion (1−x) of silicon, wherein x is greater than about 0.2, and further wherein the width of the disposable germanium-silicon spacer is optimized for implant offset from a gate structure of a PMOS device;
• implanting a portion of the substrate offset from the gate structure of the PMOS device by the disposable germanium-silicon spacer;
• and
• removing the disposable germanium-silicon spacer on the at least one permanent spacer on the at least one sidewall of the at least one PMOS device.