Forming devices on a semiconductor substrate
OwnerTadanori Yamaguchi, Ken Liao +2inventors
InventorsTadanori Yamaguchi, Ken Liao, Fanling Yang, Robert F. Scheer
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Abstract
A method for forming a plurality of devices on a substrate is disclosed. The method includes providing an oxide layer over the substrate, forming diffused regions in the plurality of devices, and performing at least one high-energy implant in the diffused regions. The diffused regions are buried and driven. Oxide layer is then removed. The method also includes depositing an epitaxial layer over the diffused regions, such that the diffused regions are buried under the epitaxial layer, in a single row.
Claims17
A method for forming a plurality of devices on a substrate, comprising:
- providing a first oxide layer over the substrate;
- forming diffused regions in the plurality of devices;
- performing a first at least one high-energy implant in said diffused regions;
- burying and driving said diffused regions, and removing said first oxide layer;
- and
- depositing an epitaxial layer over said diffused regions, such that said diffused regions of the plurality of devices are buried under said epitaxial layer, in a single row.
A method for forming a plurality of devices on a substrate, comprising:
- first providing a first oxide layer over the substrate;
- first forming a first set of diffused regions under a first selected combination of the plurality of devices;
- first performing a first at least one high-energy implant in said first set of diffused regions;
- removing said first oxide layer;
- second providing a second oxide layer over the substrate;
- second forming a second set of diffused regions, in conjunction with the first set of diffused regions, under a second selected combination of the plurality of devices;
- second performing a second at least one high-energy implant in said second set of diffused regions;
- burying and driving said diffused regions, and removing said second oxide layer;
- and
- depositing an epitaxial layer over said diffused regions, such that said diffused regions of the plurality of devices are buried under said epitaxial layer.
A method for forming a plurality of devices on a substrate, comprising:
- providing a first oxide layer over the substrate;
- depositing resist over the first oxide layer;
- exposing the resist and etching the first oxide layer over the plurality of devices;
- removing and cleaning the resist;
- forming diffused regions in the plurality of devices;
- performing at least one high-energy implant in said diffused regions;
- burying and driving said diffused regions, and removing said first oxide layer;
- depositing an epitaxial layer over said diffused regions, such that said diffused regions of the plurality of devices are buried under said epitaxial layer;
- selectively providing a second oxide layer over the epitaxial layer;
- and
- performing a second at least one high-energy implant over selected diffused regions.
Dependencies are inferred from the claim text.