Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus

A semiconductor device comprising:

• a polycrystalline semiconductor film as an active layer, said active layer including large tilt angle grain boundaries and small tilt angle grain boundaries,
• wherein the number of grain boundaries cutting across when an electric current flows in the active layer is equal to or less than one per 1 μm of an electric current path length for the large tilt angle grain boundaries, and is equal to or greater than one per 1 μm of an electric current path length for the small tilt angle grain boundaries,
• wherein the small tilt angle grain boundaries have differences in orientation less than 15° in the grain boundaries.

A semiconductor device comprising:

• a polycrystalline semiconductor film as an active layer, said active layer including large tilt angle grain boundaries and small tilt angle grain boundaries,
• wherein an average size of aggregates of crystal grains having the small tilt angle grain boundaries is equal to or greater than 1 μm, and
• wherein the small tilt angle grain boundaries have differences in orientation less than 15° in the grain boundaries.