Methodology for electrically induced selective breakdown of nanotubes
AssigneeInternational Business Machines Corporation
InventorsPhaedon Avouris, Philip G. Collins, Vincent Stephane Derycke, Richard Martel
Life of this patent
Estimating the term…
Abstract
A method is provided for forming a device. The method provides a substrate, and provides a plurality of nanotubes in contact with the substrate. The method comprises depositing metal contacts on the substrate, wherein the metal contacts are in contact with a portion of at least one nanotube. The method further comprises selectively breaking the at least one nanotube using an electrical current, removing the metal contacts, cleaning a remaining nanotube, and depositing a first metal contact in contact with a first end of the nanotube and a second metal contact in contact with a second end of the nanotube.
Claims25
A method for forming a device comprising the steps of:
- providing a substrate;
- providing a plurality of nanotubes in contact with the substrate;
- depositing metal contacts on the substrate, wherein the metal contacts are in contact with a portion of at least one nanotube;
- selectively breaking the at least one nanotube using an electrical current;
- removing the metal contacts;
- cleaning a remaining nanotube;
- and
- depositing a first metal contact in contact with a first end of the nanotube and a second metal contact in contact with a second end of the nanotube.
A method for forming a p-type field effect transistor device comprising the steps of:
- providing an insulating substrate;
- providing a plurality of carbon nanotube bundles including metallic and semiconducting component nanotubes in contact with the substrate;
- breaking the carbon nanotube bundles;
- cleaning carbon nanotube bundles;
- depositing a resist over a portion of the device, wherein a portion of the carbon nanotube bundles is exposed;
- exposing the portion of the carbon nanotube bundles to a gas;
- depositing a plurality of metal contacts;
- removing the resist;
- depositing a gate oxide over the device;
- and
- depositing a top gate metal contact.
A method for forming an n-type field effect transistor device comprising the steps of:
- providing an insulating substrate;
- providing a plurality of carbon nanotube bundles including metallic and semiconducting component nanotubes in contact with the substrate;
- breaking the carbon nanotube bundles;
- cleaning carbon nanotube bundles;
- depositing a resist over a portion of the device, wherein a portion of the carbon nanotube bundles is exposed;
- annealing the device;
- depositing a plurality of metal contacts;
- removing the resist;
- annealing the device to form n-type nanotubes;
- depositing a gate oxide over the device;
- and
- depositing a top gate metal contact.
Dependencies are inferred from the claim text.