Method for producing a semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasahiro Ogawa, Daisuke Ueda, Masahiro Ishida, Masaaki Yuri, Hirokazu Shimizu
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Abstract
A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.
Claims12
A method for producing a semiconductor device comprising:
- a first step of forming a first semiconductor layer on a mother substrate;
- a second step of forming a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate by irradiating the mother substrate with irradiation light from a surface opposite to the first semiconductor layer;
- and
- a third step of forming a second semiconductor layer including an active layer on the first semiconductor layer in which the thermally decomposed layer is formed.
Dependencies are inferred from the claim text.