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US 2002/0173062 A1Published application
Method for manufacturing GaN-based LED
OwnerLung-Chien Chen, Wen-How Lan +1inventors
InventorsLung-Chien Chen, Wen-How Lan, Fen-Ren Chien
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Abstract
A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode) is provided for remedy of the defect of central notch in the far field beam pattern of a conventional GaN-based LED by relocating a pair of P-and N-electrodes and reforming the shape of an illuminating surface thereof.
Claims18
A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode), the procedure thereof comprising:
- growing an N-GaN layer on a sapphire-wafer substrate;
- growing a P-GaN layer on the N-GaN layer;
- forming a trapezoid mask layer on the P-GaN layer;
- etching to remove the part of P-GaN layer exposed so as to form an N-contact area, which passes through the P-GaN layer to reach the N-GaN layer;
- removing the trapezoid mask layer;
- forming a first metallic layer with a via hole on the P-GaN layer for serving as a transparent conductive electrode by using the lithography process and the evaporating techniques;
- forming a second metallic layer on the first metallic layer and filled in the via hole for serving as a P-electrode;
- forming a third metallic layer on the N-contact area by using the N-electrode;
- and
- forming a second bonding pad on the second metallic layer of the P-electrode and a third bonding pad on the third metallic layer of the N-electrode.
7 more elements
A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode), the procedure thereof comprising:
- growing an N-GaN layer on a sapphire-wafer substrate;
- growing a P-GaN layer on the N-GaN layer;
- forming a trapezoid mask layer on the P-GaN layer;
- etching to remove the part of P-GaN layer exposed so as to form an N-contact area, which passes through the P-GaN layer to reach the N-GaN layer;
- removing the trapezoid mask layer;
- forming a first metallic layer with a via hole on the P-GaN layer for serving as a transparent conductive electrode by using the lithography process and the evaporating techniques;
- forming a second metallic layer on the first metallic layer and filled in the via hole for serving as a P-electrode;
- forming a third metallic layer on the N-contact area by using the lithography process and the evaporating techniques for serving as an N-electrode;
- and
- forming a second or a third triangular bonding pad on the P-electrode or the N-electrode respectively by using the lithography process and the evaporating techniques, wherein those two triangular bonding pads are formed symmetrically to each other with respect to X and Y axes.
7 more elements
Dependencies are inferred from the claim text.