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US 2002/0172890 A1Published application
Electron beam projection utilizing multiple exposures with different current densities
AssigneeIntel Corporation
InventorRichard Schenker
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Abstract
Lithography is carried out by dividing the pattern into less critical features and more critical features. The more critical features are patterned slower to obtain more resolution. The less critical features can be patterned at higher current, which allows a faster patterning.
Claims22
A method, comprising
- determining a desired pattern to be formed using electrons;
- dividing said desired pattern into a first pattern part and a second pattern part;
- and
- using said electrons on said first pattern part at a different time than said electrons are used on said second pattern part.
1 more element
A method, comprising:
- forming a pattern that will be exposed using electron beam projection;
- and
- preventing electron-to-electron interactions without decreasing current density of the entire pattern.
An electron beam projection system, comprising:
- a source of electron beams, capable of operating at least at a first power and a second power;
- a first mask having patterns thereon intended for operating at said first power;
- and
- a second mask having patterns portions thereon intending for operating at said second power.
1 more element
Dependencies are inferred from the claim text.