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AssigneeInternational Business Machines Corporation
InventorsEdward Paul Barth, Stephan A. Cohen, Chester Dziobkowski, John Anthony Fitzsimmons, Stephen McConnell Gates, Thomas Henry Ivers, Sampath Purushothaman, Darryl D. Restaino, Horatio Seymour Wildman
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A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.
A diffusion barrier comprising a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein said dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material, said high-permeability material is formed on said low-permeability material.
A semiconductor structure comprising a substrate having at least one metal region formed therein and a diffusion barrier formed on a surface of said substrate, wherein said diffusion barrier comprises a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein said dielectric stack comprises alternating films composed of a high-permeability material and a low permeability material, said high-permeability material is formed on said low-permeability material.
A method of fabricating a diffusion barrier on a substrate comprising the step of:
Dependencies are inferred from the claim text.