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US 2002/0172774 A1Published application
Method of n2o annealing an oxide layer on a silicon carbide layer
AssigneeCree, Inc.
InventorLori A. Lipkin
Life of this patent
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Abstract
Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer on the silicon carbide layer and then annealing the oxide layer in an N2O environment at a predetermined temperature profile and at a predetermined flow rate profile of N2O. The predetermined temperature profile and the predetermined flow rate profile are selected so as to reduce interface states of the oxide/silicon carbide interface with energies near the conduction band of SiC.
Claims35
A method of fabricating a silicon carbide structure, comprising;
- forming an oxide layer on a silicon carbide layer;
- and
- annealing the oxide layer in an N2O environment using a predetermined temperature profile which includes an anneal temperature of greater than about 1100° C. and a flow rate profile which includes a flow rate which provides an initial residence time of the N2O of at least about 11 seconds.
A method of fabricating a silicon carbide structure, comprising;
- forming the oxide layer on the silicon carbide layer;
- and
- annealing the oxide layer in an N2O environment using a predetermined temperature profile and at a predetermined flow rate profile of N2O, wherein the predetermined temperature profile and the predetermined flow rate profile are selected so as to reduce interface states of the oxide/silicon carbide interface with energies near the conduction band of SiC.
Dependencies are inferred from the claim text.