Method for vapor deposition of a metal compound film
AssigneeNEC Corporation
InventorsKazuhiko Endo, Motofumi Saitoh
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Abstract
A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.
Claims18
A method for depositing monoatomic layers of a metal compound to form a metal compound film on a substrate, comprising the step of irradiating alternately an organometal compound as a source material and either of oxygen radicals, nitrogen radicals and a mixture of oxygen radicals and nitrogen radicals as an oxidizing or nitriding agent.
Dependencies are inferred from the claim text.