US 2002/0172767 A1 · Chemical vapor deposition growth of single-wall carbon nanotubes

Abstract

The invention relates to a chemical vapor deposition (“CVD”) process for the growth of single-wall carbon nanotube (“SWNT”). According to the invention, methane gas is decomposed in the presence of a supported iron-containing catalyst to grow SWNT material within a growth temperature range from about 670° C. to about 800° C. The process provides higher yields of SWNT material and reduces the formation of amorphous carbon. Thus, the SWNT material produced according to the invention will minimize problems associated with purification steps, such as breakage or damage to the SWNT material. The invention provides for the manufacture of SWNT material at lower temperatures, which not only results in lower equipment and processing costs, but also provides compatibility with substrates that cannot be used at higher temperatures. The invention may be used to provide an inexpensive process for the mass production of SWNT material.

Claims18

Dependent claims

A chemical vapor deposition process for the preparation of a single-wall carbon nanotube, comprising:

providing methane gas and a supported iron-containing catalyst to a chemical vapor deposition chamber, and
decomposing the methane in the presence of the supported iron-containing catalyst, under a sufficient gas pressure and for a time sufficient, to grow single-wall carbon nanotubes at a temperature from about 670° C. to about 800° C.

Dependencies are inferred from the claim text.

Chemical vapor deposition growth of single-wall carbon nanotubes

Life of this patent

Chemical vapor deposition growth of single-wall carbon nanotubes

Life of this patent

Abstract

Claims18