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US 2002/0172652 A1Published application
Composition for film formation and material for insulating film formation
AssigneeJsr Corporation
InventorsNoriyasu Shinohara, Kaori Shirato, Michinori Nishikawa, Takashi Okada, Kinji Yamada
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Abstract
A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.
Claims5
A composition for film formation which comprises
- (A) at least one member selected from the group consisting of an aromatic polyarylene and an aromatic poly(arylene ether),
- (B) a polymer having repeating structural units represented by the following formula (1), and
- (C) an organic solvent,
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- wherein R1 represents a hydrocarbon group having 1 to 5 carbon atoms and a is an integer of 2 to 1,000.
2 more elements
Dependencies are inferred from the claim text.