Pressure responsive device and method of manufacturing semiconductor substrate for use in pressure responsive device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasakazu Nakabayashi
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasakazu Nakabayashi
Estimating the term…
The invention provides a pressure responsive device capable of achieving thinning or miniaturization while maintaining a high performance and a method of manufacturing a semiconductor substrate for use therein. A back electrode 5 is placed on a bottom surface 4a of a concave 4 formed on a central portion of a main surface 3a of a semiconductor substrate 3. A peripheral edge portion of a vibrating electrode membrane 7 is fixed on a peripheral surface 3c surrounding the concave 4. In this manner, a capacitor comprised of the back electrode 5/a space 8 (air)/the vibrating electrode membrane 7 is formed. The concave 4 is formed by etching, and therefore variation in depth of the concave 4 in each apparatus is suppressed. As a result, a highly reliable and inexpensive pressure responsive apparatus is obtained.
A pressure responsive device comprising:
A method of manufacturing a semiconductor substrate used in a pressure responsive device, the semiconductor substrate having a concave with a bottom surface, a peripheral surface surrounding the concave, and at least one communication groove running from an inner circumference to an outer circumference of the peripheral surface on one main surface,
Dependencies are inferred from the claim text.