Aluminum-free vertical cavity surface emitting laser (VCSELs)
OwnerManijeh Razeghiinventor
Life of this patent
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Abstract
An Al-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.
Claims21
A VCSEL comprising a distributed Bragg reflector having an active layer of up to 36 periods, formed of Aluminum free material in a superlattice structure.
A method of preparing a VCSEL comprising patterning mesas in a substrate, depositing GaInP on said mesas so as to form a lattice mismatch, growing an active layer of successive layers of GaAs and InGaP;
- and
- growing a p-type layer of GaInP/GaAs as a DBR.
A VCSEL comprising a distributed Bragg reflector formed of Aluminum free material having an active layer of up to 36 periods of InGaP/GaAs in a superlattice structure, said structure being adjacent a layer of GaInP on a substrate, said superlattice comprising alternating layers of GaAs at 69 nm and layer of GaInP at 76 nm.
A vertical cavity surface emitting laser comprising a plurality of spaced and discrete mesas, each having a first n-type distributed bragg reflector on a GaAs layer, an active layer comprising a superlattice of InAs/GaAs and a second p-type distributed bragg reflector having up to 36 periods of alternating layers of 69 nm GaAs and 76 nm GaInP.
A method of preparing a VCSEL comprising the steps of:
- a) preparing a layer of GaAs;
- b) patterning said GaAs layer with photoresist;
- c) etching said patterned photo resist to form discrete spaced mesas;
- d) depositing a layer of GaInP on each of said mesas;
- e) forming a superlattice of GaAs/GaInP on said GaInP layer on each of said mesas;
- and
- f) forming a p-type distributed bragg reflector on said superlattice structure.
Dependencies are inferred from the claim text.