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US 2002/0172248 A1Published application
Semiconductor laser
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMasahiro Kito
Life of this patent
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Abstract
A semiconductor laser includes a substrate; and a multilayered film formed on the substrate and including an active layer. The multilayered film includes a stripe structure that extends in a longitudinal direction of a resonator and has a tapered portion in which a width of a stripe changes in a tapered manner; and a first side face and a second side face that sandwich the stripe structure. At least one side face of the first side face and the second side face is inclined with respect to a principal surface of the substrate.
Claims17
A semiconductor laser comprising:
- a substrate;
- and
- a multilayered film formed on the substrate and including an active layer, the multilayered film comprising:
- a stripe structure that extends in a longitudinal direction of a resonator and has a tapered portion in which a width of a stripe changes in a tapered manner;
- and
- a first side face and a second side face that sandwich the stripe structure,
- wherein at least one side face of the first side face and the second side face is inclined with respect to a principal surface of the substrate.
4 more elements
A semiconductor laser comprising:
- a substrate;
- and
- a multilayered film formed on the substrate and including an active layer, the multilayered film comprising:
- a stripe structure that extends in a longitudinal direction of a resonator and has a tapered portion in which a width of a stripe changes in a tapered manner;
- a first side face and a second side face that sandwich the stripe structure;
- and
- a buried layer in which the stripe structure is buried,
- wherein an angle formed by the first side face or the second side face and a principal surface of the buried layer is an obtuse angle or a sharp angle.
5 more elements
Dependencies are inferred from the claim text.