Memory device testing
AssigneeMicron Technology, Inc.
InventorEbrahim Abedifard
Life of this patent
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Abstract
Memory devices having redundancy selection circuitry are adapted to introduce test input signals into the redundancy selection path. The memory devices include a redundancy selection circuit having a latch for latching an incoming redundancy match signal. The latch includes a pair of reverse-coupled inverters. The latch is further coupled to receive one or more test input signals. The latch is responsive to one or more control signals to selectively generate the latched match signal from the incoming redundancy match signal or one of the test input signals. Such latch circuits are useful for controlling selection of a redundant element in a memory device during testing without significantly impacting the speed path of the redundancy selection circuitry during normal operation of the memory device.
Claims22
A method of operating a memory device, comprising:
- during a test mode:
- applying a first input signal to an input of a latch;
- latching the first input signal in the latch, thereby generating a first latch output signal from the first input signal;
- applying a control signal to the latch to introduce a test input signal into the latch, thereby generating a second latch output signal from the test input signal, wherein the second latch output signal is independent of a logic level of the first input signal;
- accessing a primary element when the second latch output signal has a first logic level;
- and
- suppressing access to the primary element when the second latch output signal has a second logic level;
- and
- during a normal operation:
- comparing an applied memory cell location address with a known defective address;
- generating a redundancy match signal indicative of whether the applied location address matches the known defective address;
- applying the redundancy match signal to the input of the latch;
- latching the redundancy match signal in the latch, thereby generating a third latch output signal, wherein the third latch output signal has either the first logic level or the second logic level, the first logic level being indicative of a match between the applied location address and the known defective address;
- accessing a primary element associated with the applied location address when the third latch output signal has the second logic level;
- and
- suppressing access to the primary element associated with the applied location address when the third latch output signal has the first logic level.
A method of operating a memory device, comprising:
- applying a first input signal to an input of a feedforward inverter;
- inverting the first input signal, thereby generating a first feedforward signal on an output of the feedforward inverter;
- isolating the first input signal from the feedforward inverter;
- applying the first feedforward signal to a first input of a feedback inverter;
- inverting the first feedforward signal, thereby generating a first feedback signal on an output of the feedback inverter;
- applying the first feedback signal to the input of the feedforward inverter;
- inverting the first feedback signal, thereby generating a second feedforward signal on the output of the feedforward inverter;
- applying the second feedforward signal to the first input of the feedback inverter and applying a test input signal to a second input of the feedback inverter;
- and
- generating a second feedback signal from the test input signal, wherein the second feedback signal has a logic level independent of a logic level of the second feedforward signal;
- applying the second feedback signal to the input of the feedforward inverter;
- inverting the second feedback signal, thereby generating a third feedforward signal on the output of the feedforward inverter;
- and
- selectively accessing either a primary memory element or a redundant memory element in response to a logic level of the third feedforward signal.
A method of testing a memory device, comprising:
- applying a first input signal to a first input of a feedforward inverter;
- inverting the first input signal, thereby generating a first feedforward signal on an output of the feedforward inverter;
- isolating the first input signal from the feedforward inverter;
- applying the first feedforward signal to an input of a feedback inverter;
- inverting the first feedforward signal, thereby generating a first feedback signal on an output of the feedback inverter;
- applying the first feedback signal to the first input of the feedforward inverter and applying a test input signal to a second input of the feedforward inverter;
- generating a second feedforward signal from the test input signal, independent of a logic level of the first feedback signal;
- and
- selectively accessing either a primary memory element or a redundant memory element in response to a logic level of the second feedforward signal.
Dependencies are inferred from the claim text.