Integrated chip having SRAM, DRAM and Flash memory and method for fabricating the same
AssigneeInternational Business Machines Corporation
InventorsLouis L. Hsu, Carl Radens, Li-Kong Wang
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Abstract
A semiconductor memory system fabricated on one substrate is presented including an SRAM device, a DRAM device and a Flash memory device. In one embodiment the SRAM device is a high-resistive load SRAM device. In another embodiment the DRAM device is a deep trench DRAM device. A method is also presented for fabricating the memory system on one substrate having the SRAM device, the DRAM device and the Flash memory device.
Claims48
A memory system comprising:
- at least one NVRAM memory cell,
- at least one DRAM memory cell having a deep trench capacitor, and
- at least one SRAM memory cell,
- wherein said at least one NVRAM, DRAM, and SRAM cells are fabricated on one substrate.
A memory system comprising:
- at least one NVRAM memory cell,
- at least one DRAM memory cell, and
- at least one SRAM memory cell having a high resistive load element,
- wherein said at least one NVRAM, DRAM, and SRAM cells are fabricated on one substrate.
A method for fabricating a memory system comprising the steps of:
- providing a single substrate;
- fabricating at least one NVRAM cell on the single substrate;
- fabricating at least one DRAM cell having a deep trench capacitor on the single substrate;
- and
- fabricating at least one SRAM cell on the single substrate.
A method for fabricating a memory system comprising the steps of:
- providing a single substrate;
- fabricating at least one NVRAM cell on the single substrate;
- fabricating at least one DRAM cell on the single substrate;
- and
- fabricating at least one SRAM cell having a high resistive load element on the single substrate.
A memory system comprising:
- at least one NVRAM cell having a stack-gate structure,
- at least one SRAM cell having a high resistive load element, and
- at least one DRAM cell having a deep trench capacitor,
- wherein said NVRAM, SRAM and DRAM cells are fabricated on one substrate.
A method for transferring data in a memory system having at least one NVRAM memory cell, at least one DRAM memory cell having a deep trench capacitor, and at least one SRAM memory cell, wherein said at least one NVRAM, DRAM, and SRAM cells are fabricated on one substrate, comprising the step of transferring data stored in one of the at least one DRAM, SRAM and NVRAM cells to another of the at least one DRAM, SRAM and NVRAM cells.
A method for transferring data in a memory system having at least one NVRAM memory cell, at least one DRAM memory cell having a deep trench capacitor, and at least one SRAM memory cell, wherein said at least one NVRAM, DRAM, and SRAM cells are fabricated on one substrate, comprising the step of transferring data stored in one of the at least one DRAM, SRAM and NVRAM cells to another of the at least one DRAM, SRAM and NVRAM cells.
Dependencies are inferred from the claim text.