Back to results
US 2002/0171995 A1Published application
Stack up type low capacitance overvoltage protective device
AssigneeInpag Technology Co., Ltd.
InventorsC. Y. Lee, Kang-Neng Hsu
Life of this patent
Estimating the term…
Abstract
Stack up type low capacitance overvoltage protective device is composed of a substrate; a conductive low electrode layer formed on the substrate; a voltage sensitive material layer formed on the conductive lower electrode layer; and a conductive upper electrode layer formed on the voltage sensitive material layer.
Claims7
Stack up type low capacitance overvoltage protective device composed of a substrate;
- a conductive lower electrode layer formed on said substrate;
- a voltage sensitive material layer formed on said conductive lower electrode layer;
- and a conductive upper electrode layer formed on said voltage sensitive material layer.
Stack up type low capacitance overvoltage protective device composed of a substrate;
- a conductive lower electrode layer formed on said substrate;
- a voltage sensitive material layer formed on said conductive lower electrode layer;
- a low dielectric material layer having a reserved connection hole formed on said voltage sensitive material layer;
- and a conductive upper electrode layer formed on said voltage sensitive material.
1 more element
Dependencies are inferred from the claim text.