Monolithic optically pumped high power semiconductor lasers and amplifiers
AssigneeAgere Systems Guardian Corp.
InventorsHenry A. Blauvelt, Robert M. Lammert, Jeffrey E. Ungar
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Abstract
The present invention, a monolithic, high power, single mode electro-optic device is disclosed. The electro-optic device generally includes an electrically pumped device with a pn junction and an optically pumped device evanescently coupled to the electrically pumped device. In operation the electrically pumped device is driven by an external source into a high energy state to emit photons at a first wavelength. The optically pumped device is at a low energy state so as to absorb the emitted photons and re-radiated light at a second wavelength.
Claims31
An electro-optic device, comprising:
- an electrically pumped device having an integral optically pumped device, wherein said electrically pumped device emits photons at a first wavelength and wherein said optically pumped device absorbs said photons and emits an optical wave at a second wavelength.
A electro-optic device, comprising:
- an electrically pumped device comprising a first active region formed between first region of semiconductor material and a second region of semiconductor material;
- an optically pumped device integrally formed in one of said first or second semiconductor regions, wherein said electrically pumped device emits photons at a first wavelength and wherein said optically pumped device absorbs said photons and emits an optical wave at a second wavelength.
A method for transmitting a high power, single mode optical wave, comprising the steps of:
- electrically pumping an electrically pumped device to cause said electrically pumped device to emit photons at a first wavelength;
- coupling said photons into an optically pumped device integrally formed in said electrically pumped device to cause said optically pumped device to emit photons at a second wavelength.
A method of forming a monolithic electro-optic having an optically pumped device integrally formed in an electrically pumped device comprises:
- forming a first portion of a first semiconductor layer on a substrate;
- forming said optically pumped device on a first area of said first portion of said first semiconductor layer;
- forming a second portion of said first semiconductor layer on said optically pumped device and on a second area of said first portion of said semiconductor layer;
- forming a first active region on said second portion of said first semiconductor layer;
- and
- forming a second semiconductor layer on said active region.
A method for producing a high power semiconductor laser, comprising the steps of:
- forming a first portion of n-type semiconductor layer on a substrate;
- forming an optically pumped device on a first area of said first portion of said n-type semiconductor layer;
- forming a second portion of said n-type semiconductor layer on said optically pumped device and on a second area of said first portion of said n-type semiconductor layer;
- forming a first active region on said second portion of said n-type semiconductor layer;
- and
- forming a p-type semiconductor layer on said active region.
Dependencies are inferred from the claim text.