Flip-chip-type semiconductor device and manufacturing method thereof

Abstract

There are provided a flip-chip-type semiconductor device and a manufacturing method thereof that can sufficiently reduce stress generated in the connecting portions between a semiconductor chip and a mounting substrate, and can achieve excellent mounting reliability. A pad electrode is selectively formed on the surface of a semiconductor chip, conductive post including at least two conductive layers, which have different materials each other, on the pad electrode, and bump electrode is formed on the conductive post. The bump electrode is connected to a mounting substrate, and the pad electrode is electrically connected to the mounting substrate. The conductive post is formed by forming first conductive layer and second conductive layer on the first conductive layer selectively on a base material (temporary substrate), electrically connecting the first and second conductive layers to the pad electrode, and thereafter separating the temporary substrate from the first conductive layer.

Dependencies are inferred from the claim text.