# US 2002/0171135 A1 · Semiconductor device and package with high heat radiation effect > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2002/0171135 A1 - Document ID: US20020171135A1 - Status: Published application - Kind: A1 - Application number: 10/191,571 - Filed: 2002-07-09 - Published: 2002-11-21 - Earliest claimed: 1998-09-04 - Assignees: Sony Corporation - Inventors: Hiroshi Yoshida; Tsuyoshi Tojo; Masafumi Ozawa - Web page: https://patentgrep.com/patent/US20020171135A1 ## CPC - H01S 5/02212: Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis - B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals - H01S 5/34313: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs} - H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser} - H01S 5/0207: {Substrates having a special shape} - H01S 5/02326: Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses - H01S 5/0234: Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings - H01S 5/0237: by soldering - H01S 5/02469: {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC} - H01S 5/32341: {blue laser based on GaN or GaP} - H01S 5/4031: {Edge-emitting structures} - H01S 2304/12: Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract A conductive mounting board provided in a package has a recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board. Heat generated in the semiconductor laser is radiated via the conductive mounting board, and short-circuit between the n-side electrode and the p-side electrode is prevented by the insulating mounting board. In an alternative semiconductor device, the p-side electrode of the semiconductor element is fixed to the conductive mounting board and the n-side electrode thereof projects from the conductive mounting board. ## Claims ### Claim 1 A semiconductor device comprising: a conductive mounting board having a recessed portion and a projecting portion disposed on one surface of said conductive mounting board; an insulating mounting board disposed on the recessed portion of said conductive mounting board; and a semiconductor element having one portion disposed on said conductive mounting board and the other portion disposed on said insulating mounting board. ### Claim 2 (depends on 1) A semiconductor device according to claim 1, wherein said insulating mounting board comprises a wiring portion securely insulated from said conductive mounting board. ### Claim 3 (depends on 2) A semiconductor device according to claim 2, wherein said semiconductor element comprises a first electrode electrically connected to said wiring portion of said insulating mounting board, and a second electrode electrically connected to said conductive mounting board. ### Claim 4 (depends on 3) A semiconductor device according to claim 3, wherein said semiconductor element comprises a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer which are stacked in sequence, wherein said first electrode being electrically connected to said first conduction type semiconductor layer, said second electrode being electrically connected to said second conduction type semiconductor layer. ### Claim 5 (depends on 4) A semiconductor device according to claim 4, wherein said semiconductor element has said first electrode on a portion, on the side where said active layer is provided, of said first conduction type semiconductor layer, and said second electrode on a portion, on the side opposed to said active layer, of said second conduction type semiconductor layer. ### Claim 6 (depends on 5) A semiconductor device according to claim 5, wherein said first conduction type semiconductor layer is an n-type semiconductor layer and said second conduction type semiconductor layer is a p-type semiconductor layer, and said first electrode is an n-side electrode and said second electrode is a p-side electrode. ### Claim 7 (depends on 4) A semiconductor device according to claim 4, wherein each of said first conduction type semiconductor layer, said active layer, and said second conduction type semiconductor layer is made from a compound semiconductor composed of a nitride containing nitrogen (N) and at least one kind of group III elements selected from a group consisting of gallium (Ga), aluminum (Al), boron (B) and indium (In). ### Claim 8 (depends on 1) A semiconductor device according to claim 1, wherein said semiconductor element comprises a plurality of light emitting portions each having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer being disposed on the same substrate. ### Claim 9 (depends on 8) A semiconductor device according to claim 8, wherein said insulating mounting board has a plurality of wiring portions insulated from said conductive mounting board; said semiconductor element has, in each light emitting portion, a first electrode on a portion, on the side where said active layer is provided, of said first conduction type semiconductor layer, and has a second electrode on a portion, on the side opposed to said active layer, of said second conduction type semiconductor layer; and said first electrode in each light emitting portion is electrically connected to the associated one of said plurality of wiring portions of said insulating mounting board, and said second electrode in each light emitting portion is electrically connected to said conductive mounting board. ### Claim 10 (depends on 1) A semiconductor device according to claim 1, wherein said conductive mounting board has on said one surface a separating portion for separating said insulating mounting board from said conductive mounting board with a gap kept therebetween, said separating portion being disposed between the recessed portion and the projecting portion. ### Claim 11 (depends on 1) A semiconductor device according to claim 1, wherein said conductive mounting board has on said one surface a projecting position fixing portion for preventing the positional offset of said insulating mounting board, said position fixing portion being disposed in such a manner as to provide the recessed portion between the projecting portion and said position fixing portion. ### Claim 12 (depends on 1) A semiconductor device according to claim 1, wherein said insulating mounting board is formed on the recessed portion of said conductive mounting board by deposition. ### Claim 13 A package comprising: a conductive mounting board having on its one surface a recessed portion and a projecting portion; and an insulating mounting board disposed on the recessed portion of said conductive mounting board. ### Claim 14 (depends on 13) A package according to claim 13, wherein said insulating mounting board comprises a wiring portion securely insulated from said conductive mounting board. ### Claim 15 (depends on 13) A package according to claim 13, wherein said conductive mounting board has on said one surface a separating portion for separating said insulating mounting board from said conductive mounting board with a gap kept therebetween, said separating portion being disposed between the recessed portion and the projecting portion. ### Claim 16 A package comprising: a conductive mounting board having on its one surface a recessed portion on which an insulating mounting board is to be disposed and a projecting portion on which a semiconductor element is to be disposed. ### Claim 17 (depends on 16) A package according to claim 16, wherein said conductive mounting board has, between the recessed portion and the projecting portion, a separating portion for separating said insulating mounting board disposed on the recessed portion from said conductive mounting board with a gap kept therebetween. ### Claim 18 A method of fabricating a semiconductor device, comprising the steps of: forming a conductive mounting board having on its one surface a recessed portion and a projecting portion; forming an insulating mounting board disposed on the recessed portion of said conductive mounting board; forming a semiconductor element; and disposing one portion of said semiconductor element on the conductive mounting board and also disposing the other portion of said semiconductor element on said insulating mounting board. ### Claim 19 (depends on 18) A method of fabricating a semiconductor device according to claim 18, wherein said step of forming the semiconductor element comprises the step of sequentially stacking a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer on a substrate; and providing a first electrode on a portion, on the side where said active layer is provided, of said first conduction type semiconductor layer and providing a second electrode on a portion, on said side opposed to said active layer, of said second conduction type semiconductor layer, to thereby form said semiconductor element; and said step of disposing the semiconductor element comprises the steps of disposing said second electrode on said conductive mounting board and disposing said first electrode on said insulating mounting board. ### Claim 20 (depends on 19) A method of fabricating a semiconductor device according to claim 19, wherein said first conduction type semiconductor layer is formed of an n-type semiconductor layer, and said second conduction type semiconductor layer is formed of a p-type semiconductor layer. ### Claim 21 (depends on 19) A method of fabricating a semiconductor device according to claim 19, wherein each of said first conduction type semiconductor layer, said active layer, and said second conduction type semiconductor layer is made from a compound semiconductor composed of a nitride containing nitrogen (N) and at least one kind of group III elements selected from a group consisting of gallium (Ga), aluminum (Al), boron (B) and indium (In). ### Claim 22 (depends on 18) A method of fabricating a semiconductor device according to claim 18, wherein said step of forming the semiconductor element comprises the steps of forming a plurality of light emitting portions, each having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, which are sequentially stacked on the same substrate, and providing a first electrode on a portion, on the side where said active layer is provided, of said first conduction type semiconductor layer and providing a second electrode on a portion, on the side opposed to said active layer, of said second conduction type semiconductor layer, to thereby form said semiconductor element; and said step of disposing said semiconductor element comprises the step of disposing said second electrode on said conductive mounting board and disposing said first electrode on said insulating mounting board. ### Claim 23 (depends on 18) A method of fabricating a semiconductor device according to claim 18, further comprising the step of forming a separating portion, between the recessed portion and the projecting portion of said conductive mounting board, for separating said insulating mounting board from said conductive mounting board with a gap kept therebetween. ### Claim 24 (depends on 18) A method of fabricating a semiconductor device according to claim 18, further comprising the step of forming a projecting position fixing portion for preventing the positional offset of said insulating mounting board, on one surface of said conductive mounting board in such a manner as to provide the recessed portion between the projecting portion and said position fixing portion. ### Claim 25 (depends on 18) A method of fabricating a semiconductor device according to claim 18, wherein said step of forming the insulating mounting board comprises the step of forming said insulating mounting board on the recessed portion of said conductive mounting board by deposition. ### Claim 26 A method of fabricating a package comprising the steps of: forming a conductive mounting board having on its one surface a recessed portion and a projecting portion; and forming an insulating mounting board disposed on the recessed portion of said conductive mounting board. ### Claim 27 (depends on 26) A method of fabricating a package according to claim 26, further comprising the step of forming, between the recessed portion and the projecting portion of said conductive mounting board, a separating portion for separating said insulating mounting board from said conductive mounting board with a gap kept therebetween. ### Claim 28 A method of fabricating a package comprising the step of: forming a conductive mounting board having on its one surface a recessed portion on which an insulating mounting board is to be disposed and a projecting portion on which a semiconductor element is to be disposed. ### Claim 29 (depends on 28) A method of fabricating a package according to claim 28, further comprising the step of forming, between the recessed portion and the projecting portion of said conductive mounting board, a separating portion for separating said insulating mounting board disposed on the recessed portion from said conductive mounting board with a gap kept therebetween. ### Claim 30 A semiconductor device comprising: a semiconductor element having a plurality of stacked semiconductor layers and also having a first electrode and a second electrode provided on the same side in the stacking direction; and a conductive mounting board for supporting said semiconductor element in a state in which one of said first electrode and said second electrode of said semiconductor element is fixed to said conductive mounting board. ### Claim 31 (depends on 30) A semiconductor device according to claim 30, wherein said semiconductor element has, as the semiconductor layers, a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer which are sequentially stacked; and said first electrode is provided on a portion, on the side where said second conduction type semiconductor layer is provided, of said first conduction type semiconductor layer, and said second electrode is provided on a portion, on the side opposed to said first conduction type semiconductor layer, of said second conduction type semiconductor layer, said second electrode being fixed on said conductive mounting board. ### Claim 32 (depends on 31) A semiconductor device according to claim 31, wherein said first conduction type semiconductor layer is an n-type semiconductor layer and said second conduction type semiconductor layer is a p-type semiconductor layer; and said first electrode is an n-side electrode and said second electrode is a p-side electrode. ### Claim 33 (depends on 31) A semiconductor device according to claim 31, wherein each of said first conduction type semiconductor layer, said active layer, and said second conduction type semiconductor layer is made from a compound semiconductor composed of a nitride containing nitrogen (N) and at least one kind of group III element selected from a group consisting of gallium (Ga), aluminum (Al), boron (B) and indium (In). ### Claim 34 (depends on 30) A semiconductor device according to claim 30, wherein said conductive mounting board has a mounting surface on which said semiconductor element is to be disposed; and said semiconductor element is disposed on said conductive mounting board in such a manner that either said first electrode or said second electrode is fixed on said mounting surface of said conductive mounting board, and the other electrode projects from said conductive mounting board in the direction parallel to said mounting surface. ### Claim 35 (depends on 34) A semiconductor device according to claim 34, wherein said conductive mounting board has a side surface on the side where the other of said first electrode and said second electrode of said semiconductor element projects; and said side surface is tilted, from said mounting surface side to the opposed side, toward one of said first electrode and said second electrode. ### Claim 36 (depends on 30) A semiconductor device according to claim 30, further comprising a pin electrically insulated from said conductive mounting board; wherein the other of said first electrode and said second electrode of said semiconductor element is electrically connected to said pin via a wire. ### Claim 37 (depends on 30) A semiconductor device according to claim 30, further comprising a support having a supporting surface on which said conductive mounting board is to be supported; wherein said conductive mounting board has a mounting surface on which said semiconductor element is to be disposed, said mounting surface being perpendicular to said supporting surface; and said conductive mounting board is located in such a manner as to be shifted rightwardly from the center of the supporting surface when said mounting surface is directed upwardly. ### Claim 38 (depends on 30) A semiconductor device according to claim 30, further comprising a support having a supporting surface on which said conductive mounting board is to be supported; wherein said conductive mounting board has a mounting surface on which said semiconductor element is to be disposed, said mounting surface being perpendicular to said supporting surface; and said support has a fixing groove for fixing said conductive mounting board with said mounting surface directed downwardly. ### Claim 39 A package comprising: a conductive mounting board having a mounting surface on which a semiconductor element is to be disposed; and a support, having a supporting surface perpendicular to said mounting surface, for supporting said conductive mounting board by said supporting surface; wherein said conductive mounting board is located in such a manner as to be shifted rightwardly or leftwardly from the center of said supporting surface when said mounting surface is directed upwardly; and said conductive mounting board has a side surface at an end, towards the center of said support, in the direction parallel to said mounting surface and said supporting surface, and said side surface is tilted, from said mounting surface side to the opposed side, along the opposed end of said mounting surface. ### Claim 40 (depends on 39) A package according to claim 39, wherein said conductive mounting board is located to be shifted rightwardly from the center of said supporting surface when said mounting surface is directed upwardly. ### Claim 41 (depends on 39) A package according to claim 39, wherein said support has a fixing groove for fixing said conductive mounting board with said mounting surface directed downwardly. ### Claim 42 A method of fabricating a semiconductor device, comprising the steps of: stacking a plurality of semiconductor layers while providing a first electrode and a second electrode on the same side in the stacking direction, to form a semiconductor element; and disposing said semiconductor element on said conductor mounting board while fixing either said first electrode or said second electrode on said conductive mounting board. ### Claim 43 (depends on 42) A method of fabricating a semiconductor device according to claim 42, wherein said step of forming the semiconductor element comprises the steps of: sequentially stacking a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer; and providing a first electrode on a portion, on the side where said second conduction type semiconductor layer is provided, of said first conduction type semiconductor layer, and providing a second electrode on a portion, on the side opposed to said first conduction type semiconductor layer, of said second conduction type semiconductor layer. ### Claim 44 (depends on 43) A method of fabricating a semiconductor device according to claim 43, wherein said first conduction type semiconductor layer is an n-type semiconductor layer, and said second conduction type semiconductor layer is a pill type semiconductor layer. ### Claim 45 (depends on 43) A method of fabricating a semiconductor device according to claim 43, wherein each of said first conduction type semiconductor layer, said active layer, and said second conduction type semiconductor layer is made from a compound semiconductor composed of a nitride containing nitrogen (N) and at least one kind of group III element selected from a group consisting of gallium (Ga), aluminum (Al), boron (B) and indium (In). ### Claim 46 (depends on 42) A method of fabricating a semiconductor device according to claim 42, further comprising the steps of: fixing either said first electrode or said second electrode of said semiconductor element to said mounting surface of said conductive mounting board; and allowing the other electrode to project from said conductive mounting board in the direction parallel to said mounting surface. ### Claim 47 (depends on 42) A method of fabricating a semiconductor device according to claim 42, further comprising the steps of: setting said conductive mounting board on which said semiconductor element has been mounted, in such a manner that said semiconductor element is located on the lower side and said conductive mounting board is located on the upper side; and connecting the other of said first electrode and said second electrode by means of a wire to a pin electrically insulated from said conductive mounting board.