US 2002/0171120 A1 · Semiconductor device

Abstract

A semiconductor device with a spiral inductor is provided, which determines the area of an insulation layer to be provided in the surface of a wiring board thereunder. A trench isolation oxide film (19), which is a complete isolation oxide film including in part the structure of a partial isolation oxide film, is provided in a larger area of the surface of an SOI layer (3) than that corresponding to the area of a spiral inductor (SI). The trench isolation oxide film (19) is comprised of a first portion (191) having a first width and extending in a direction approximately perpendicular the surface of a buried oxide film (2), and a second portion (192) having a second width smaller than the first width and being continuously formed under the first portion (191), extending approximately perpendicular to the surface of the buried oxide film (2). The trench isolation oxide film (19) is provided such that a horizontal distance between each end surface of the second portion (192) and a corresponding end surface of the spiral inductor (SI) makes a predetermined distance or more.

Claims16

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
a first isolation oxide film provided in a main surface of said semiconductor substrate;
and
an inductance element provided on a region in which said first isolation oxide film is formed with an interlayer insulation film therebetween,
wherein said first isolation oxide film is provided so that a horizontal distance between an end surface of said first isolation oxide film and a nearest one of end surfaces of said inductance element is not less than a vertical distance between a lower surface of said inductance element, which is opposed to said first isolation oxide film, and a surface of said semiconductor substrate.

2 more elements

A semiconductor device comprising:

a semiconductor substrate;
a first isolation oxide film provided in a main surface of said semiconductor substrate;
an inductance element provided on a region in which said first isolation oxide film is formed with an interlayer insulation film therebetween;
and
a conductor layer provided at a height between said first isolation oxide film and said inductance element;
wherein said conductor layer is provided so that a horizontal distance between an end surface of said conductor layer and a nearest one of end surfaces of said inductance element is not less than a vertical distance between a lower surface of said inductance element and a surface of said semiconductor substrate.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims16