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US 2002/0171118 A1Published application
Deep slit isolation with controlled void
AssigneeInternational Business Machines Corporation
InventorsJack A. Mandelman, Ramachandra Divakaruni, Johnathan E. Faltermeier, William R. Tonti
Life of this patent
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Abstract
An isolation region for a memory array in which the isolation region includes at least one trench region having sidewalls that extend to a bottom surface and a slit region formed beneath the final trench region, wherein the slit region is narrower than the overlying trench regions and has a void formed intentionally therein is provided.
Claims36
A method of forming a deep slit isolation region in a surface of a semiconductor substrate, said method comprising the steps of:
- (a) forming a first trench region in a surface of a semiconductor substrate, said first trench region having sidewalls extending to a bottom surface;
- (b) forming first spacers on said sidewalls of said first trench region;
- (c) forming a slit region through said bottom surface of said first trench region, said slit region having a narrower width than said first trench region;
- and
- (d) filling said first trench region and said slit region with at least one dielectric material so as to form a void within said slit region.
2 more elements
A deep slit isolation region comprising:
- a first trench region having sidewalls extending to a first shoulder region;
- and
- a slit region extending from said first shoulder region, wherein said first trench region and said slit region are filled with at least one dielectric material, and said slit region contains a void therein.
A memory cell array comprising:
- at least a pair of active device regions which include a plurality of spaced apart vertical dynamic random access memory (DRAM) cells, wherein said pair of active device regions are isolated from each other by an adjoining deep slit isolation region, said deep slit isolation region comprising a first trench region having sidewalls extending to a first shoulder region;
- and a slit region extending from said first shoulder region, wherein said first trench region and said slit region are filled with at least one dielectric material, and said slit region contains a void therein.
Dependencies are inferred from the claim text.