# US 2002/0171109 A1 · Semiconductor device with SOI structure and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2002/0171109 A1 - Document ID: US20020171109A1 - Status: Published application - Kind: A1 - Application number: 10/178,429 - Filed: 2002-06-24 - Published: 2002-11-21 - Earliest claimed: 2000-09-28 - Assignees: NEC Corporation - Inventors: Kenya Kobayashi - Web page: https://patentgrep.com/patent/US20020171109A1 ## CPC - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H10D 86/01: Manufacture or treatment - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes a conductive semiconductor substrate laminated or bonded on a conductive support substrate through a first insulating film, a separation trench which separates a device formation region where at least a desired element is formed, from a region of the semiconductor substrate, a separation trench, and a substrate contact region where the semiconductor substrate is not present. The semiconductor device further includes a second insulating film which fills the separation trench and covers a surface of the substrate contact region, an external connection electrode formed above the semiconductor substrate, and a support substrate connecting section which passes through the first insulating film and the second insulating film in the substrate contact region to connect the external connection electrode and the support substrate. ## Claims ### Claim 1 A semiconductor device comprising: a conductive semiconductor substrate laminated or bonded on a conductive support substrate through a first insulating film; a separation trench which separates a device formation region where at least a desired element is formed, from a region of said semiconductor substrate; a separation trench; a substrate contact region where said semiconductor substrate is not present; a second insulating film which fills said separation trench and covers a surface of said substrate contact region; an external connection electrode formed above said semiconductor substrate; and a support substrate connecting section which passes through said first insulating film and said second insulating film in said substrate contact region to connect said external connection electrode and said support substrate. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein said external connection electrode is formed through a third insulating film on said semiconductor substrate. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein said third insulating film is identical to said second insulating film. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein said support substrate connecting section comprises a conductive film which is connected with said external connection electrode and covers said second insulating film; and a contact section which passes through said first insulating film and said second insulating film to said support substrate in said substrate contact region. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein said conductive film contains a metal film having aluminum as main material. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, wherein said contact section is formed of a single contact. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein said single contact comprises: a refractory metal film formed on side wall of a contact hole for said contact; and said conductive film filling said contact hole in which said refractory metal film is formed. ### Claim 8 (depends on 6) The semiconductor device according to claim 6, wherein said single contact comprises: an additional conductive film which covers side wall of a contact hole for said contact; a refractory metal film formed on said additional conductive film on said side wall of said contact hole; and said conductive film filling said contact hole in which said refractory metal film is formed. ### Claim 9 (depends on 4) The semiconductor device according to claim 4, wherein said contact section comprises: a plurality of contact plugs arranged in an array. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, wherein said plurality of contact plugs are formed of tungsten. ### Claim 11 A method of manufacturing a semiconductor device, comprising the steps of: (a) forming at least a desired element in a device forming region of a conductive semiconductor substrate on a chip in which said semiconductor substrate is formed on a conductive support substrate through a first insulating film; (b) forming trenches which pass through said semiconductor substrate to said first insulating film; (c) forming a second insulating film on said semiconductor substrate to fill said trenches and to cover a side wall of a substrate contact region; (d) forming element contact holes for said element to pass through said second insulating film; (e) forming a contact hole section in said substrate hole region to pass through said first and second insulting films to said support substrate; (f) filling said element contact hole with first conductive material; (g) filling said contact hole section with second conductive material; (h) forming a conductive film connected to said contact hole section; and (i) forming an external connection electrode connected to said conductive film. ### Claim 12 (depends on 11) The method according to claim 11, wherein said (d) forming step and said (e) forming step are carried out at a same time. ### Claim 13 (depends on 11) The method according to claim 11, wherein said (d) forming step includes a first exposure step and said (e) forming step includes a second exposure step, said first exposure step and said second exposure step are individually carried out. ### Claim 14 (depends on 13) The method according to claim 13, wherein said (d) forming step and said (e) forming step are carried out at a time, except for said first exposure step and said second exposure step. ### Claim 15 (depends on 11) The method according to claim 11, wherein said (f) filling step and said (g) filling step are carried out at a time. ### Claim 16 (depends on 11) The method according to claim 11, wherein said (e) forming step comprises the step of: forming a single contact hole in said substrate contact region. ### Claim 17 (depends on 16) The method according to claim 16, wherein said (g) filling step and said (h) forming step are carried out at a same time. ### Claim 18 (depends on 11) The method according to claim 11, wherein said (e) forming step comprises the step of: forming a plurality of contact holes arranged in an array in said substrate contact region.