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US 2002/0171099 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsTsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima
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Abstract
A deep trench is formed in a silicon substrate. The inner surface of the trench is next coated with a thin polycrystalline silicon film (liner film) so as not to close the trench. A silicon germanium film (node electrode) is then formed on the thin polycrystalline silicon film so as not to close the trench. Next, a heat treatment is performed on the silicon germanium film thereby to flow only the silicon germanium so that the trench is filled.
Claims16
A semiconductor device comprising:
- a silicon substrate having a trench formed in a surface of the silicon substrate;
- a polycrystalline silicon film coating an inner surface of the trench such that the trench is not closed;
- and
- a conductive film made of material having a lower melting point than silicon and formed on the polycrystalline silicon film so as to fill the trench.
1 more element
A method of manufacturing a semiconductor device, comprising steps of:
- forming a trench on a surface of a silicon substrate;
- coating an inner surface of the trench with a polycrystalline silicon film as a liner film such that the trench is not closed;
- forming a conductive film made of material having a lower melting point than silicon, on the polycrystalline silicon film, such that the trench is not closed;
- and
- flowing the conductive film so as to fill the trench, by performing a heat treatment on the conductive film.
2 more elements
Dependencies are inferred from the claim text.