Semiconductor laser element

A semiconductor laser device comprising:

• an active layer;
• an n-type waveguide layer;
• a p-type waveguide layer,
• the active layer being interposed between the n-type and p-type waveguide layers;
• n-type and p-type cladding layers formed so that outsides of the n-type and p-type waveguide layers are interposed therebetween;
• first current blocking layers formed to define a stripe-shaped current injected region extending in a direction where a front facet of the device from which a laser light is emitted and a rear facet opposing thereto are connected;
• and
• a second current blocking layer formed to transverse the stripe-shaped current injected region in a vicinity of the front facet,
• wherein the second current blocking layer is formed so that the following relationship is fulfilled:
• Γ1dInjection>Γ1dNon-injection
• wherein Γ1dInjection is a light confinement factor at the current injected region and Γ1dNon-injection is a light confinement factor at the current noninjected region.

A semiconductor laser device comprising:

• an active layer;
• an n-type waveguide layer;
• a p-type waveguide layer,
• the active layer being interposed between the n-type and p-type waveguide layers;
• n-type and p-type cladding layers formed so that outsides of the n-type and p-type waveguide layers are interposed therebetween;
• first current blocking layers formed to define a stripe-shaped current injected region extending in a direction where a front facet of the device from which a laser light is emitted and a rear facet opposing thereto are connected;
• and
• a second current blocking layer formed to transverse the stripe-shaped current injected region in a vicinity of the front facet,
• wherein the second current blocking layer is formed so that the following relationship is fulfilled:
• Γ2dInjection Γ2dFacet
• wherein Γ2dInjection is a light confinement factor at the current injected region and Γ2dFacet is a light intensity rate at the active layer in the front facet with respect to a propagation mode when propagating the waveguide mode at the current injected region into a current noninjected region by the beam propagation method.