Active matrix display device with storage capacitor for each pixel

An active matrix display device, wherein:

• each of pixels disposed in a matrix is configured in the vicinity of an intersection of a gate line and a data line and provided with a thin-film transistor, a display element, and a storage capacitor;
• the thin-film transistor is formed on a substrate as a top gate type;
• a first electrode of the storage capacitor is configured with an active layer of the thin-film transistor extended along the data line;
• and
• a second electrode of the storage capacitor is formed to overlap the first electrode and an insulating layer held between the first electrode and the substrate.

An active matrix display device, wherein:

• each of pixels disposed in a matrix is configured in the vicinity of an intersection of a gate line and a data line and provided with a thin-film transistor, a display element, and a storage capacitor;
• the thin-film transistor is formed on a substrate as a top gate type;
• a first electrode of the storage capacitor is configured with an active layer of the thin-film transistor extended to a region below the data line;
• a second electrode of the storage capacitor is formed between the first electrode and the substrate to overlap the first electrode and an insulating layer held between them;
• and
• a conductive shielding layer is formed in the region where the data line and the first electrode of the storage capacitor overlap an insulating layer held between the data line and the first electrode.

An active matrix display device, wherein:

• each of pixels disposed in a matrix is configured in the vicinity of an intersection of a gate line and a data line and provided with a thin-film transistor, a display element, and a storage capacitor;
• the thin-film transistor is formed on a substrate as a top gate type;
• a first electrode of the storage capacitor is formed of a semiconductor layer which configures an active layer of the thin-film transistor;
• a second electrode of the storage capacitor is formed between the first electrode and the substrate to overlap the first electrode and an insulating layer held between them;
• and
• the second electrode is provided with a black matrix function for shielding light between the respective pixels and has at least a channel region of the thin-film transistor is open.

An active matrix display device, wherein:

• a pixel section and a driver section are disposed on the same substrate;
• the pixel section is provided with a plurality of pixels arranged in a pattern, and each pixel has a pixel section thin-film transistor, a display element, and a storage capacitor;
• the pixel section thin-film transistor is formed as a top gate type transistor on the substrate of each pixel;
• a first electrode of the storage capacitor is electrically connected to an active layer of the pixel section thin-film transistor;
• a second electrode of the storage capacitor is formed to partly overlap at least the active layer of the pixel section thin-film transistor with an insulating layer held between the active layer and the substrate;
• the driver section has a plurality of driver section thin-film transistors which output a signal for driving the respective pixels of the pixel section;
• the driver section thin-film transistor is configured as a top gate type transistor on the substrate;
• an active layer of the driver section thin-film transistor is configured of the same material layer as the active layer of the pixel section thin-film transistor;
• and
• a conductive layer which is formed of the same material as the second electrode is disposed between the active layer of the driver section thin-film transistor and the substrate with the insulating layer held between them.

A driver built-in type active matrix display device which drives liquid crystal sealed in a gap between first and second substrates to display data, wherein:

• a pixel section and a driver section are disposed on the same substrate;
• the pixel section is provided with a plurality of pixels, each of which has a pixel section thin-film transistor, a liquid crystal capacitor and a storage capacitor;
• the pixel section thin-film transistor is formed as a top gate type transistor for each pixel on the liquid crystal opposing side of the first substrate;
• the storage capacitor is formed in a region formed between a first electrode which is also served by an active layer of the pixel section thin-film transistor, and a second electrode which is disposed to oppose the first electrode with an insulating layer held between them and also disposed between the active layer of the pixel section thin-film transistor and the substrate;
• the driver section comprises a plurality of driver section thin-film transistors which output a signal for driving each pixel of the pixel section;
• and
• the driver section thin-film transistor is configured as a top gate type transistor on the substrate, an active layer of the driver section thin-film transistor is configured of the same material layer as the active layer of the pixel section thin-film transistor, and a conductive layer which is formed of the same material as the second electrode is disposed between the active layer of the driver section thin-film transistor and the substrate with the insulating layer held between the active layer and the conductive layer.