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US 2002/0171085 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideomi Suzawa, Yoshihiro Kusuyama, Shunpei Yamazaki
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Abstract
The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG. 15.
Claims15
A semiconductor device comprising:
- a gate wiring formed over an insulating surface;
- an insulating film formed over the gate wiring;
- a first amorphous semiconductor film formed over the insulating film;
- a source region and a drain region provided in a second amorphous semiconductor film containing an impurity element of one conductivity type, formed over the first amorphous semiconductor film;
- one of a source wiring and an electrode, provided on one of the source region and the drain region;
- and
- a pixel electrode formed so as to partially overlap and be in contact with the electrode,
- wherein an end of the first amorphous semiconductor film has a tapered shape.
5 more elements
A semiconductor device comprising:
- a gate wiring formed over an insulating surface;
- an insulating film formed over the gate wiring;
- a first amorphous semiconductor film provided over the insulating film;
- a source region and a drain region provided in a second amorphous semiconductor film containing an impurity element of one conductivity type, provided over the first amorphous semiconductor film;
- one of a source wiring and an electrode, provided over one of the source region and the drain region;
- and
- a pixel electrode provided so as to partially overlap and be in contact with the electrode,
- wherein one of an end of the first amorphous semiconductor film and an end of the second amorphous semiconductor film has a tapered shape.
5 more elements
A semiconductor device comprising:
- a gate wiring formed over an insulating surface;
- a gate insulating film formed over the gate wiring;
- an amorphous semiconductor film formed over the gate insulating film;
- a source region and a drain region, formed over the amorphous semiconductor film;
- one of a source wiring and an electrode, formed over one of the source region and the drain region;
- and
- a pixel electrode formed so as to partially overlap and be in contact with the electrode,
- wherein a region overlapping with the gate wiring with the gate insulating film therebetween and not overlapping with the source region or the drain region in the amorphous semiconductor film is thinner than other region and is tapered to become thinner toward a center of the region.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a gate wiring over an insulating surface;
- a second step of forming an insulating film covering the insulating surface and the gate wiring;
- a third step of forming a first amorphous semiconductor film over the insulating film;
- a fourth step of forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
- a fifth step of forming a conductive film comprising metallic material over the second amorphous semiconductor film;
- and
- a sixth step of etching the conductive film and the first amorphous semiconductor film and the second amorphous semiconductor film to form a side edge of the first amorphous semiconductor film into a taper shape;
- a seventh step of forming a transparent conductive film over the conductive film;
- and
- an eighth step of etching a part of the first amorphous semiconductor film and the transparent conductive film and the conductive film and the second amorphous semiconductor film to expose a part of the first amorphous semiconductor film and to form a pixel electrode from the transparent conductive film and form a source wiring from the conductive film and form source region and drain region from the second amorphous semiconductor film.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a gate wiring over an insulating surface;
- a second step of forming an insulating film covering the insulating surface and the gate wiring;
- a third step of forming a first amorphous semiconductor film over the insulating film;
- a fourth step of forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
- a fifth step of forming a conductive film comprising metallic material over the second amorphous semiconductor film;
- a sixth step of etching the insulating film and the first amorphous semiconductor film and the second amorphous semiconductor film and the conductive film to form a side edge of the first amorphous semiconductor film into a taper shape;
- a seventh step of forming a transparent conductive film over the conductive film;
- and
- an eighth step of etching a part of the first amorphous semiconductor film and the transparent conductive film and the conductive film and the second amorphous semiconductor film to expose a part of the first amorphous semiconductor film and to form a pixel electrode from the transparent conductive film and form a source wiring from the conductive film and form a source region and a drain region from the second amorphous semiconductor film.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- a step of forming a gate wiring over an insulating surface;
- a step of forming an insulating film over the insulating surface and the gate wiring;
- a step of forming a first amorphous semiconductor film over the insulating film;
- a step of forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
- a step of forming a conductive film over the second amorphous semiconductor film;
- and
- a step of etching the conductive film and the first amorphous semiconductor film and the second amorphous semiconductor film to form a side edge of the first amorphous semiconductor film into a taper shape;
- a step of forming a transparent conductive film over the second amorphous semiconductor film;
- and
- a step of etching the transparent conductive film and the conductive film and the second amorphous semiconductor film to form a source wiring and a source region and a drain region,
- wherein the conductive film contains aluminum or titanium, and
- wherein the first amorphous semiconductor film is etched into a taper shape with a mixture gas Cl2 and BCl2.
9 more elements
A method of manufacturing a semiconductor device, comprising:
- a step of forming a gate wiring over an insulating surface;
- a step of forming an insulating film over the insulating surface and the gate wiring;
- a step of forming a first amorphous semiconductor film over the insulating film;
- a step of forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
- a step of forming a conductive film over the second amorphous semiconductor film;
- a step of etching the first amorphous semiconductor film and the second amorphous semiconductor film and the conductive film to form a side edge of the first amorphous semiconductor film into a taper shape;
- a step of forming a transparent conductive film over the second amorphous semiconductor film;
- a step of etching the transparent conductive film and the conductive film and the second amorphous semiconductor film to form a source wiring and a source region and a drain region,
- wherein the conductive film contains at least tantalum, and
- wherein the first amorphous semiconductor film is etched into a taper shape with a mixture gas of Cl2 and CF4.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- a step of forming a gate wiring over an insulating surface;
- a step of forming an insulating film over the insulating surface and the gate wiring;
- a step of forming a first amorphous semiconductor film over the insulating film;
- a step of forming a second amorphous semiconductor film containing an impurity element of one conductivity type over the first amorphous semiconductor film;
- a step of forming a conductive film over the second amorphous semiconductor film;
- a step of etching the first amorphous semiconductor film and the second amorphous semiconductor film and the conductive film to form a side edge of the first amorphous semiconductor film into a taper shape;
- a step of forming a transparent conductive film over the second amorphous semiconductor film;
- and
- a step of etching the transparent conductive film and the conductive film and the second amorphous semiconductor film by etching to form a source wiring and a source region and a drain region,
- wherein the conductive film contains at least tungsten, and
- wherein the first amorphous semiconductor film is etched into a taper shape with a mixture gas of Cl2 and CF4 and O2 or a mixture gas of Cl2 and SF6 and O2.
8 more elements
Dependencies are inferred from the claim text.