Thin film transistor and method of fabricating the same

A method of fabricating a thin film transistor, comprising the steps of:

• (a) forming a gate electrode on an electrically insulating substrate;
• (b) forming a gate insulating film on said electrically insulating substrate, covering said gate electrode therewith;
• (c) forming a semiconductor layer on said gate insulating film above said gate electrode;
• (d) forming source and drain electrodes both making electrical contact with said semiconductor layer;
• (e) patterning said semiconductor layer into a channel;
• (f) applying first plasma to said semiconductor layer through the use of a first gas;
• and
• (g) applying second plasma to said semiconductor layer through the use of a second gas;
• and
• (h) forming an electrically insulating film covering said semiconductor layer therewith.

A method of fabricating a thin film transistor, comprising the steps of:

• (a) forming a semiconductor layer in a film-forming apparatus;
• (b) introducing a first gas into said film-forming apparatus to apply first plasma to said semiconductor layer;
• (c) introducing a second gas into said film-forming apparatus to apply second plasma to said semiconductor layer;
• (d) patterning said semiconductor layer into a channel;
• (e) forming a channel protection layer over said channel in said film-forming apparatus;
• and
• (f) forming an electrically insulating film covering said semiconductor layer therewith.